物理化学学报 >> 2007, Vol. 23 >> Issue (05): 625-629.doi: 10.1016/S1872-1508(07)60038-2

研究论文 上一篇    下一篇

Ta2O5/Si薄膜界面结构及光催化活性

伍彦; 姚文清; 朱永法   

  1. 清华大学化学系, 北京 100084
  • 收稿日期:2006-10-11 修回日期:2006-12-25 发布日期:2007-04-28
  • 通讯作者: 朱永法 E-mail:zhuyf@mail.tsinghua.edu.cn

Interfacial Structure of Ta2O5/Si Filmand Photoactivity

WU Yan; YAO Wen-Qing; ZHU Yong-Fa   

  1. Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
  • Received:2006-10-11 Revised:2006-12-25 Published:2007-04-28
  • Contact: ZHU Yong-Fa E-mail:zhuyf@mail.tsinghua.edu.cn

摘要: 利用溶胶-凝胶法和旋转镀膜法在单晶Si(110)基底上制备了Ta2O5光催化剂薄膜. 薄膜颗粒的晶粒度和大小随着热处理温度的升高而增加. 利用扫描俄歇电子能谱(AES)的表面成分分析、深度剖析和线形分析技术研究了热处理温度对Ta2O5/Si 样品膜层和基底的界面化学状态和相互作用的影响规律. 研究表明, 在700 ℃以下热处理时, Ta2O5/Si薄膜界面处以扩散作用为主;在800 ℃高温热处理时,在界面扩散的同时也引发界面反应, 生成了SiO2物种, 界面扩散和界面反应会对薄膜和基底元素的化学价态发生影响. 在紫外光下降解水杨酸的光催化活性的研究表明, 在600 ℃下焙烧制备的Ta2O5/Si薄膜具有与TiO2/Si薄膜相当的光催化活性.

关键词: Ta2O5/Si薄膜, 俄歇电子能谱, 界面扩散, 界面反应, 光催化活性

Abstract: Tantalumoxide (Ta2O5) thin filmphotocatalysts were prepared on single crystal Si(110) substrates via sol-gel and spin coating methods. Ta2O5 crystallinity was improved, and the crystal size became larger with the increasing of heat treating temperature. The interface diffusion and reaction of the film were studied by using Auger electron spectroscopy (AES) depth profile and line shape analysis. Diffusion was dominant at the interface layer when the calcination, temperature was below 700 ℃. When the temperature reached 800 ℃, both interface diffusion and reaction occurred. The photocatalytic activity was studied using aqueous salicylic acid as a degradation probe molecule under UV-light irradiation. It was found that Ta2O5/Si filmshowed a photocatalytic activity similar to that of TiO2/Si film.

Key words: Ta2O5/Si thin film, Auger electron spectroscopy, Interface diffusion, Interface reaction, Photocatalytic activity

MSC2000: 

  • O644