物理化学学报 >> 2008, Vol. 24 >> Issue (06): 977-980.doi: 10.1016/S1872-1508(08)60043-1

研究论文 上一篇    下一篇

混合蓝色和绿色发射的高亮度白色有机电致发光器件

马涛; 蒋亚东; 于军胜; 娄双玲; 李璐; 张清   

  1. 电子科技大学光电信息学院, 电子薄膜与集成器件国家重点实验室, 成都 610054; 上海交通大学化学化工学院高分子科学与工程系, 上海 200240
  • 收稿日期:2007-11-19 修回日期:2008-02-28 发布日期:2008-06-03
  • 通讯作者: 于军胜;张清 E-mail:jsyu@uestc.edu.cn;qz14@sjtu.edu.cn

Bright White Organic Light-Emitting Diode Mixed Blue and Green Emission

MA Tao; JIANG Ya-Dong; YU Jun-Sheng; LOU Shuang-Ling; LI Lu; ZHANG Qing   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China; Department of Polymer Science and Engineering, School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
  • Received:2007-11-19 Revised:2008-02-28 Published:2008-06-03
  • Contact: YU Jun-Sheng;ZHANG Qing E-mail:jsyu@uestc.edu.cn;qz14@sjtu.edu.cn

摘要: 使用星形六苯芴类新材料1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene (HKEthFLYPh)分别制备了三种不同结构的有机电致发光器件. 在结构为indium-tin oxide (ITO)/NPB (40 nm)/HKEthFLYPh (10 nm)/Alq3(50 nm)/Mg:Ag (200 nm)的器件中, 获得了两个电致发光谱峰分别位于435 和530 nm处的明亮白光. HKEth-FLYPh是能量传输层; N,N’-bis-(1-naphthyl)-N,N’-diphenyl-(1,1’-biphenyl)-4,4’-diamine (NPB)是空穴传输层和蓝色发光层; tris(8-hydroxyquinoline)aluminum (Alq3)是电子传输层和绿色发光层. 结果表明, 当驱动电压为15 V时, 器件的最大亮度达到8523 cd·m-2; 在5.5 V时, 器件达到最大流明效率为1.0 lm·W-1. 在电压为9 V时, CIE色坐标为(0.29, 0.34). 此外, 通过改变HKEthFLYPh层的厚度, 发现蓝色发射的相对强度随着HKEthFLYPh层厚度的增加而增强.

关键词: 白色有机电致发光器件, 星形六苯芴, HKEthFLYPh, 能量传递

Abstract: Double-layer and triple-layer organic light-emitting diodes (OLEDs) were fabricated using a novel star-shaped hexafluorenylbenzene organic material, 1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene (HKEthFLYPh) as an energy transfer layer, N,N’-bis-(1-naphthyl)-N,N’-diphenyl-(1,1’-biphenyl)-4,4’-diamine (NPB) as a hole-transport layer (HTL) and blue emissive layer (EML), and tris (8-hydroxyquinoline)aluminum (Alq3) as an electron-transport layer (ETL) and green light-emitting layer. Bright white light was obtained with a triple-layer device structure of indium-tin-oxide (ITO)/NPB (40 nm)/HKEthFLYPh (10 nm)/Alq3 (50 nm)/Mg:Ag (200 nm). A maximum luminance of 8523 cd·m-2 at 15 V and a power efficiency of 1.0 lm·W-1 at 5.5 V were achieved. The Commissions Internationale de L’Eclairage (CIE) coordinates of the device were (0.29, 0.34) at 9 V, which located in white light region. With increasing filmthickness of HKEthFLYPh, light emission intensity fromNPB increased compared to that of Alq3.

Key words: White organic light-emitting diode (WOLED), Star-shaped hexafluorenylbenzene, HKEthFLYPh, Energy transfer

MSC2000: 

  • O644