物理化学学报 >> 1985, Vol. 1 >> Issue (05): 455-459.doi: 10.3866/PKU.WHXB19850509

研究论文 上一篇    下一篇

用半导体高-低结概念对氧化银(Ⅱ)阴极过程所作的一种新解释

李澄; 李国铮; 王士勋; 徐国宪   

  1. 山东大学化学系
  • 收稿日期:1985-01-05 修回日期:1985-05-10 发布日期:1985-10-15

A NEW EXPLANATION TO THE CATHODIC PROCESS OF SILVER(Ⅱ) OXIDE WITH THE CONCEPT OF SEMICONDUCTOR HIGH-LOW JUNCTION

Li Cheng; Li Guozheng; Wang Shixun; Xu Guoxian   

  1. Department of Chemistry, Shandong University, Jinan
  • Received:1985-01-05 Revised:1985-05-10 Published:1985-10-15

摘要: 在半导体中, 由于掺杂水平的不同, 在同种导电类型的半导体之间会形成一种被称为高-低结的势垒, 也会象p-n结一样表现出一定程度的整流特性。由于这一势垒的存在, 半导体中载流子的运动受到一个附加电场的作用, 它们的运动规律与没有高-低结时相比有所不同, 因此造成这种半导体电性质比较特殊。如带有高-低结的p~+/p-Si光阴极具有良好的光电转换性能~[1], 效率较高。在一些电极反应过程中, 由于反应中间物质的形成也会构成一定程度的高-低结。本文首次将半导体固结的概念引入电化学, 研究了AgO电极的放电过程。用高-低结机理满意地解释了一些现行理论所不能解释的现象。

Abstract: The concept of semiconductor solid junction was first introduced into the tra ditional electrochemistry. The cathodic process of AgO electrode was discussed. Some of the phenomena were explained quite satisfactoryly with a new mechanism based on the semiconductor high-low junction, these phenomena can not be explai ned by ordinary theories.