物理化学学报 >> 1987, Vol. 3 >> Issue (06): 648-652.doi: 10.3866/PKU.WHXB19870617

研究简报 上一篇    下一篇

等离子体聚合法修饰半导体光电极的研究——聚丙烯腈/n-GaAs, n-GaP电极

许颂临; 庄启星; 吴丽云; 伍振尧   

  1. 厦门大学化学系 福建海洋研究所
  • 收稿日期:1986-06-19 修回日期:1986-12-01 发布日期:1987-12-15

STUDY ON THE MODIFICATION OF SEMICONDUCTOR PHOTOELECTRODE BY PLASMA POLYMERIZATION——POLYACRYLONITRILE/n-GaAs, n-GaP ELECTRODES

Xu Songlin; Zhuang Qixing; Wu Liyun; Wu Zhenyao   

  1. Chemistry Department, Xiamen University
    Fujian Institute of Oceanograph
  • Received:1986-06-19 Revised:1986-12-01 Published:1987-12-15

Abstract: Polyacrylonitrile (PAN) film attached to n-GaAs, n-GaP photoelectrode surface by plasma polymerization has been studied. Both electrochemical behaviors and stability of the modified electrodes have been investigated. The results showed that the semiconductor electrodes with PAN film decreased photocorrosion in a certain degree, and their electrochemical characteristics and stability were improved remarkably after plasma doping.
Cyclic voltammetric analysis demonstrated that the redox reaction occurred in I-PAN films could be carried out rapidly on electrode surfaces, in favor of the capture and transfer of photoinduced holes by the films to redox couples in solution.