物理化学学报 >> 1989, Vol. 5 >> Issue (04): 446-451.doi: 10.3866/PKU.WHXB19890413

研究论文 上一篇    下一篇

对表面有膜层的金属电极阻抗半圆旋转的物理意义的探讨

张亚利; 吴秉亮; 查全性   

  1. 武汉大学化学系
  • 收稿日期:1987-12-21 修回日期:1988-12-15 发布日期:1989-08-15
  • 通讯作者: 吴秉亮

ON PHYSICAL IMPLICATION OF ROTATION OF IMPEDANCE SEMICIRCLE FOR METAL ELECTRODES COVERED WITH SURFACE FILM

Zhang Yali; Wu Bingliang*; Cha Chuansin   

  1. Chemistry Department; Wunan University
  • Received:1987-12-21 Revised:1988-12-15 Published:1989-08-15
  • Contact: Wu Bingliang

摘要: 提出了交流阻抗半圆旋转的介质损耗物理模型, 推导出由阻抗旋转半圆计算等效电路参数值的方法, 并推广到一般情况。

Abstract: A.C. impedance plot often shows rotation of semicircle it, complex plane, i.e. the centre of semicircle locates below real axis. However, the physical causes of that phenomenon are not yet completely clear. One possible cause is the surface roughness of electrode. In regard to metal eleetrods covered with surface film,the film can be considered as dielectric inserted between metal and electrolyte just as the case of a capacitor. Owing to dielectric dispersion, the capacitance of that capacitor in alternating electric field is a complex parameter C=C′-jC″. Literature data indicated that in the frequency range of a.c. impedance measurement both real and imaginary components of complex capacitance C′ and C″ are independent of frequency. It is postulated that the dielelctric behaviour of that capacitance might be the cause of impedance semicircle rotation. Based on equivalent circuit shown in Figure 4, it could be deduced that the semicircle equation on polar cooordinate is ρ=(R_t/cosδ)cos(θ+δ), and parameters of eqnivalent circuit can be calculated from impedance semicircle according to C′=1/ωR_t·1/(ctgθ-thδ) and C″=C′tanδ, Besides, the apex frequency on semicircle is f~*=fcosδ(ctanθ-tanδ). Above formulate can be reduced to normal semicircle in case δ=0.