物理化学学报 >> 1990, Vol. 6 >> Issue (05): 575-579.doi: 10.3866/PKU.WHXB19900512

研究论文 上一篇    下一篇

电极/溶液界面单分子吸附层的统计力学处理 II. 汞/水溶液界面的内层微分电容

苏文煅; 周小林   

  1. 厦门大学化学系;厦门大学计算中心
  • 收稿日期:1989-01-24 修回日期:1990-04-20 发布日期:1990-10-15
  • 通讯作者: 苏文煅

Statistical Mechanical Treatment of Absorbed Monolayer at Electrode/Solution Interface II. The Inner-Layer Differential Capacity of Hg/Aqueous Solution Interface

Su Wen-Duan; Zhou Xiao-Lin   

  1. Department of Chemistry, Xiamen University; Computer Center, Xiamen University
  • Received:1989-01-24 Revised:1990-04-20 Published:1990-10-15
  • Contact: Su Wen-Duan

摘要: 按文[1]模型, 模拟计算汞/水溶液界面五个不同温度的内层微分电容随表面电荷变化曲线. 结果表明, 文[1]处理方法对此类体系仍可成立. 指出在溶液的冰点附近, 吸附层上的水分子有可能以氢键缔合的方式连结并构成局部有序排列. 温度升高, 即趋无规分布状态。

Abstract: Based on the model presented in part I of this work, the inner capacity depen-dence on surface charge was estimated for Hg/aqueous solution interface at five different temperatures.The results show that the treatment used in our previous paper is suitable to aqueous systems. However, at the vicinity of freezing point (273 K) for aqueous solutions, the formation of ice-like structure due to the adsorbed water molecules associated with H-bond at the inner-layer may be occured, and local-order array will tend to random distribution as soon as the temperature being higher.