物理化学学报 >> 1991, Vol. 7 >> Issue (03): 366-370.doi: 10.3866/PKU.WHXB19910322

研究简报 上一篇    下一篇

铁钝化膜半导体特性的光电化学研究

张国栋   

  1. 华东冶金学院化学工程系,马鞍山 243002
  • 收稿日期:1989-10-24 修回日期:1990-09-02 发布日期:1991-06-15
  • 通讯作者: 张国栋

Photoelectrochemical Investigation of Passive film on Iron

Zhang Guo-Dong   

  1. Department of Chemical Engineering, East China Institute of Metallurgy, Maanshan 243002
  • Received:1989-10-24 Revised:1990-09-02 Published:1991-06-15
  • Contact: Zhang Guo-Dong

关键词: 铁钝化膜, 半导体, 光电化学行为, 光电流, 平带电位

Abstract: The photoelectrochemical behavior of the passive film on iron in pH=8.4 borate buffer solution was investigated. The mechanism considered for the generation of the photocurrent in the passive film, and the principle of the measurement of photocurrent were discussed. The band model of noncrytalline semiconductor was used to demonstrate the depedence of photocurrent on electrode potential and light wavelength. Results indicate that the passive film formed on iron in pH=8.4 borate solution is a noncrystalline semiconductor, its flatband potential (φ_(fb)) is -0.30 V(SCE), band gap energy (E_g) is affected by measuring potential (φ_m), When +0.30 V<φ_m<+0.80 V (SCE), E_g is 1.9 eV.

Key words: Passive film on iron, Semiconductor, Photoelectrochemical behavior, Photocurrent, Flatband potential