物理化学学报 >> 1992, Vol. 8 >> Issue (02): 202-206.doi: 10.3866/PKU.WHXB19920212

研究论文 上一篇    下一篇

n-InP/Fe3+, Fe2+界面在小信号电流阶跃下的暂态行为

钱道荪; 赵俊   

  1. 上海交通大学应用化学系,上海 200030
  • 收稿日期:1990-10-04 修回日期:1991-05-11 发布日期:1992-04-15
  • 通讯作者: 钱道荪

Transient Behavior of n-InP/Fe3+, Fe2+ Interface Using Small Current Step

Qian Dao-Sun; Zhao Jun   

  1. Department of Applied Chemistry, Shanghai Jiaotong University, Shanghai 200030
  • Received:1990-10-04 Revised:1991-05-11 Published:1992-04-15
  • Contact: Qian Dao-Sun

摘要: 应用小信号电流阶跃法研究了光照下n-InP/Fe~(3+), Fe~(2+)界面, 此时电位变化符合双指数规律, 这和理论推导是一致的。在时间很短时, 电位与时间成线性关系, 从直线斜率可求出空间电荷区电容。

关键词: 磷化铟, 半导体电极, 光电化学, 暂态方法

Abstract: In this paper the transient behavior of n-InP semiconductor electrode in Fe~(3+)/Fe~(2+) solution using current step method is studied. From the equivalent circuit of the n-InP electrode under irradiation, a theoretical model for the change of photopoten-tial is derived in the presence of a small signal. The results of the experiments confirm the derivation. On the basis of the experiments and the theoretical model we also develop a method for measuring the capacitance of the space charge layer (C_(sc)). The observation of the influences of various light intensities is studied also.

Key words: Indium phosphide, Semiconducting electrode, Photoelectrochemistry, Transient method