物理化学学报 >> 1994, Vol. 10 >> Issue (03): 260-265.doi: 10.3866/PKU.WHXB19940313

研究论文 上一篇    下一篇

VA族元素对阳极铅(II)氧化物膜半导体性质的影响(I)

浦琮, 周伟舫   

  1. 复旦大学化学系,上海 200433
  • 收稿日期:1992-09-04 修回日期:1993-03-05 发布日期:1994-03-15
  • 通讯作者: 周伟舫

Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Film (I)

Pu Cong, Zhou Wei-Fang   

  1. Department of Chemistry, Fudan University, Shanghai 200433
  • Received:1992-09-04 Revised:1993-03-05 Published:1994-03-15
  • Contact: Zhou Wei-fang

摘要:

用交流阻抗法研究了铅、铅砷、铅锑和铅铋金在4.5 mol·L~(-1) H_2SO_4溶液(20 ℃)中,以0.9 V(vs.Hg/Hg_2SO_4)极化2 h而形成的阳极膜的半导体性质.根据Mott-Schottky图,此种膜为n型半导体.pb,pb-lat%As,Pb-lat%Sb和Sb-lat%Bi上膜的平带电位分别为-0.95,-1.1, -1.0,-1.1 V(vs. Hg/Hg_2SO_4);相应的施主密度分别为0.82×10~(16),2.6×10~(16),1.2×10~(17)和0.71×10~(16) cm~(-3).

关键词: 阳极铅(II)氧化物膜, 半导体, 电化学阻抗法, Hauffe规则

Abstract:

The semiconducting properties of the anodic plumbous oxide films formed on lead, lead-arsenic, lead-antimony and lead-bismuth alloys in 4.5 mol·L~(-1) H_2SO_4 (20 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 2 h have been studied using a. c. impedance method. From the Mott-Schottky plots, the films are demonstrated to be n-type senilconductors. The flat-band potentials of the films on Pb, Pb-lat %As, Pb-lat %Sb and Pb-lat %Bi are -0.95, -1.1, -1.0 and -1.1 V(vs. Hg/Hg_2SO_4), respectively; while the corresponding donor densities are 0.82×10~(16), 2.6×10~(16), 1.2×10~(17) and 0.71×10~(16) cm~(-3).

Key words: Anodic plumbous oxide film, Semiconductor, Electrochemical impedance method, Hauffe rules