物理化学学报 >> 1994, Vol. 10 >> Issue (04): 348-353.doi: 10.3866/PKU.WHXB19940412

研究论文 上一篇    下一篇

VA族元素对阳极铅(II)氧化物膜半导体性质的影响(II)

浦琮, 周伟舫   

  1. 复旦大学化学系,上海 200433
  • 收稿日期:1992-09-04 修回日期:1993-03-05 发布日期:1994-04-15
  • 通讯作者: 周伟舫

Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Flim(II)

Pu Zong, Zhou Wei-Fang   

  1. Department of Chemistry, Fudan University, Shangahi 200433
  • Received:1992-09-04 Revised:1993-03-05 Published:1994-04-15
  • Contact: Zhou Wei-Fang

摘要:

用光电化学电流法研究了铅、铅砷、铅锑和铅铋合金在4.5 mol·L~(-1) H_2SO_4溶液(22 ℃)中,以0.9 V(vs.Hg/Hg_2SO_4)极化7 h而形成的阳极膜中的氧化铅的半导体性质,合金添加剂砷、锑和铋对t-PbO(四方氧化铝)和o-PbO(斜方氧化铝)的禁带宽度没有影响,从量子效率和电位的关系可求Pb,Pb-lat%As(at%表示原子百分比,全文同),Pb-lat%Sb和Sb-lat%Bi上膜中t-Pbo的施主密度(N_D)分别为9.3×10~(15),1.0×10~(16),3.1×10~(16)和1.3×10~(17) cm~(-3),平带位分别为-0.20,-0.22,-0.28和-0.08 V(vs.Hg/Hg_2SO_4).比较VA元素砷、锑和铋对上述膜中t-PbO的N_D(从而自由电子密度)和膜中t-PbO的生长速率的影响,可认为法添加剂砷、锑和铋对阳极膜中t-PbO的作用符合Hauffe规则.

关键词: 阳极铅(II)氧化物膜, 半导体, 光电化学电流法, Haulfe规则

Abstract:

The semiconducting properties of t-PbO (also known as tet-PbO or α-PbO) in the anodic plumbous oxide films formed on lead, lead-arseinc, lead-animony and lead bismuth alloys in 4.5 mol·L~(-1) H_2SO_4(22 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 7 h have been studied using measu-rements of photo-electrochemical current. These elements have little effect on the values of the band-gap energy of t-PbO and o-PbO in the film. From the relation between quantum yield and electrode potential, the values of the donor density of the t-PbO in the films formed on Pb, Pb-lat%As, Pb-lat%Sb and Pb-lat%Bi are 9.3×10~(15),1.0×10~(16),3.1×10~(16) and 1.3×10~(17) cm~(-3), respectively. Meanwhile, the corresponding flat-band potentials range from -0.08 to -0.28 V(vs. Hg/Hg_2SO_4). By comparing the effect of these VA elements on the growth rate of the t-PbO with that on the donor density, it is concluded that these experimental results condorm to the Hauffe Rules.

Key words: Anodic plumbous oxide film, Semiconductor, Photoelectrochemical current method, Hauffe rules