物理化学学报 >> 1994, Vol. 10 >> Issue (08): 737-740.doi: 10.3866/PKU.WHXB19940814

研究简报 上一篇    下一篇

化学氧化对多孔硅表面态和光致发光的影响

李经建, 刁鹏, 蔡生民, 侯永田, 王昕, 张树霖   

  1. 北京大学化学系,北京 100871|北京大学物理系,北京 100871
  • 收稿日期:1993-04-08 修回日期:1993-08-30 发布日期:1994-08-15
  • 通讯作者: 蔡生民

The Influence of Chmical Oxidation on Surface State and Photoluminescence of Porous Silicon

Li Jing-Jian, Diao Peng, Cai Sheng-Min, Hou Yong-Tian, Wang Xin, Zhang Shu-Lin   

  1. Department of Chemistry,Peking University,Beijing 100871|Department of Physics,Peking University,Beijing 100871
  • Received:1993-04-08 Revised:1993-08-30 Published:1994-08-15
  • Contact: Cai Sheng-Min

关键词: 多孔硅(PS), 红外光谱, 光致发光谱, 发光机制

Abstract:

The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn't SiH2 but Si-O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.

Key words: Porous silicon, Fourier transformed infrared transmission spectra, Photoluminescence, Photoluminescence mechanism