物理化学学报 >> 1995, Vol. 11 >> Issue (07): 583-586.doi: 10.3866/PKU.WHXB19950703

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阳极氧化与超临界干燥结合制备多孔硅

郭国霖, 徐东升, 桂琳琳, 马书懿, 林军, 张立东, 秦国刚   

  1. 北京大学物理化学研究所|北京 100871|北京大学物理系|北京 100871
  • 收稿日期:1995-04-07 修回日期:1995-05-11 发布日期:1995-07-15
  • 通讯作者: 郭国霖

Preparation of Porous Silicon Using Anodizing and Suppercritical Drying

Guo Guo-Lin, Xu Dong-Sheng, Gui Lin-Lin, Ma Shu-Yi, Lin Jun, Zhang Li-Dong, Qin Guo-Gang   

  1. Department of Chemistry,Peking University,Beijing 100871;Department Physics,Peking University,Beijing 100871
  • Received:1995-04-07 Revised:1995-05-11 Published:1995-07-15
  • Contact: Guo Guo-Lin

关键词: 超临界干燥, 高多孔度多孔硅, 光致发光

Abstract:

Porous silicon (PS) fabricated by anodizing have recently become the subject of intense interest due to their room temperature visble light emission properties. However, highly porous silicon made by electrochemical etching is fragile and tends to craze during normal drying in air after taken out from HF based solution. The preparation of highly porous materials by sol-gel processing followed by supercritical drying was carried out by Kistler in 1931. Since 1985, the sucpercritical drying (SD) has been used successfully to prepare a variety of aerogels, comprising a void fraction of more than 90%. This technigue has now been applied to prepare luminescent porous silicon on both <100> and <111> C-Si substrates. Porosities up to 94% have been achieved, which were determined by gravimetric measurement. Its morphological feature, microstructure and photoluminescence properties exhibit novel characteristics from those conventionally anodized porous silicon. It has been demonstrated that anodization and supercritical drying can yield ultra-high porous luminescent PS with minimal damage and much higher degree of perfection than that of previously attained. It is very interested that the PL intensity may be improved by SD method.

Key words: Supercritical drying, Ultra-high porous silicon, Photoluminescence