物理化学学报 >> 2001, Vol. 17 >> Issue (09): 769-772.doi: 10.3866/PKU.WHXB20010901

通讯    下一篇

DEA(TCNQ)2与TEA(TCNQ)2单晶上的STM热化学烧孔性能比较

雷晓钧;陈海峰;刘忠范   

  1. 北京大学化学与分子工程学院　纳米科学技术中心,北京　100871
  • 收稿日期:2001-04-17 修回日期:2001-06-20 发布日期:2001-09-15
  • 通讯作者: 刘忠范 E-mail:lzf@chem.pku.edu.cn

Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)2 and TEA(TCNQ)2

Lei Xiao-Jun;Chen Hai-Feng;Liu Zhong-Fan   

  1. Center of Nanoscale Science ＆ Technology,College of Chemistry and Molecular Engineering,Peking University,Beijing　100871
  • Received:2001-04-17 Revised:2001-06-20 Published:2001-09-15
  • Contact: Liu Zhong-Fan E-mail:lzf@chem.pku.edu.cn

PDF (PC)

2886

赞

摘要： 利用STM隧道电流焦耳热诱导分解气化的热化学烧孔方法，对两种存储材料DEA(TCNQ)2和TEA(TCNQ)2的存储性能作了比较,DEA(TCNQ)2可以得到更高的存储密度、更大的信息孔深/孔径比,有更大的写入阈值电压.由此说明通过对存储材料的设计可以对存储系统的性能进行优化.

关键词: STM, 信息存储, 热化学烧孔, 存储材料

Abstract: The thermochemical hole burning properties of two different charge transfer complexes,DEA(TCNQ)2 and TEA(TCNQ)2,were studied in this work.It shows that the data writing on DEA(TCNQ)2 needs a larger threshold voltage compared with TEA(TCNQ)2,and that the DEA(TCNQ)2 gives a smaller hole size and a higher depth/diameter ratio,demonstrating the possibility of optimizing the storage performance with a suitable molecular design.

Key words: STM, Data storage, Thermochemical Hole Burning, Storage material