物理化学学报 >> 2005, Vol. 21 >> Issue (01): 10-15.doi: 10.3866/PKU.WHXB20050103

研究论文 上一篇    下一篇

Ga2O3-NiO复合氧化物的溶胶-凝胶法制备和气敏性能

葛秀涛;方大儒;刘杏芹   

  1. 滁州学院化学系,安徽 239012; 中国科学技术大学材料科学与工程系,合 肥 230026
  • 收稿日期:2004-05-10 修回日期:2004-08-02 发布日期:2005-01-15
  • 通讯作者: 葛秀涛 E-mail:gext@cztc.edu.cn

The Preparation and Gas-sensing Properties of Ga2O3-NiO Complex Oxide by Sol-gel Method

GE Xiu-Tao;FANG Da-Ru;LIU Xing-Qin   

  1. Department of Chemistry, Chuzhou University, Anhui 239012; Department of Materials Science and Engineering University of Science and Technology of China, Hefei 230026
  • Received:2004-05-10 Revised:2004-08-02 Published:2005-01-15
  • Contact: GE Xiu-Tao E-mail:gext@cztc.edu.cn

摘要: 用溶胶-凝胶法制备了Ga2O3-NiO复合金属氧化物气敏材料,对其相组成、电导和气敏性能作了研究.结果表明:镍镓物质的量比n(Ni2+) : n(Ga3+)=0.7~0.9:2、800 ℃下热处理4 h,得到纯相尖晶石型复合金属氧化物NiGa2O4.缺陷GaNi×的反应(GaNi×→GaNi’+h●),使NiGa2O4呈p型半导体. n(Ni2+) : n(Ga3+)=1:2凝胶粉在800 ℃下热处理4 h,所得纳米微粉制作的元件在313 ℃工作温度下对C2H5OH有较高灵敏度和良好的选择性.

关键词: 溶胶-凝胶, NiGa2O4, 电导, C2H5OH, 气敏性能

Abstract: Ga2O3-NiO Complex Oxide gas-sensing materials were prepared by sol-gel method. Effects of heat-treatment temperature and different n(Ni2+) : n(Ga3+) ratios on the phase constituents were characterized by XRD, IR and ICP, respectively. The conductance-temperature and gas-sensing properties of Ga2O3-NiO were investigated. The results demonstrate that pure phase NiGa2O4 can be obtained when the ratio of Ni2+ to Ga3+(n(Ni2+) : n(Ga3+)) is 0.7~0.9 : 2 and heat-treatment is carried out at 800 ℃ for 4 hours. Because of the reaction GaNi×→GaNi’+h●, NiGa2O4 is a p-type semiconductor and exhibits high sensitivity and good selectivity to C2H5OH.

Key words: Sol-gel, NiGa2O4, Conductance, C2H5OH, Gas-sensing properties