物理化学学报 >> 2007, Vol. 23 >> Issue (08): 1306-1310.doi: 10.3866/PKU.WHXB20070833

研究简报 上一篇    

Co/Cu多层纳米线阵列的制备与磁性能

姚素薇; 宋振兴; 王宏智   

  1. 天津大学化工学院应用化学系杉山表面技术研究室, 天津 300072
  • 收稿日期:2007-01-15 修回日期:2007-03-21 发布日期:2007-08-03
  • 通讯作者: 姚素薇 E-mail:yaosuwei@263.net

Fabrication and Magnetic Properties of Co/Cu Multilayer Nanowire Arrays

YAO Su-Wei; SONG Zhen-Xing; WANG Hong-Zhi   

  1. SUGIYAMA Laboratory of Surface Technology, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
  • Received:2007-01-15 Revised:2007-03-21 Published:2007-08-03
  • Contact: YAO Su-Wei E-mail:yaosuwei@263.net

摘要: 利用双槽直流电沉积技术在阳极氧化铝(AAO)模板的纳米孔中获得调制波长为50 和200 nm 的Co/Cu多层纳米线, 多层纳米线的调制波长由电沉积时间控制. 运用扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征纳米线的形貌, Co/Cu多层纳米线的长度约20 μm, 直径约80 nm; 用X射线衍射(XRD)研究多层线的结构; 用振动样品磁强计(VSM)测试纳米线阵列的磁性能; 利用可变磁场结合高灵敏度恒流装置研究巨磁电阻(GMR)特性. 结果表明, Co/Cu多层纳米线具有磁各向异性. 当磁场与纳米线平行和垂直时, 调制波长为50 nm的多层线的矫顽力分别为87500 和34200 A·m-1, 而调制波长为200 nm的多层线阵列的矫顽力分别为28600 和8000 A·m-1. 调制波长为50 nm的多层纳米线的磁电阻变化率高达-%, 而调制波长为200 nm的多层线未产生明显的GMR效应.

关键词: Co/Cu, 多层纳米线, GMR, 自旋扩散长度, XRD

Abstract: Co/Cumultilayer nanowire arrays embedded in anodic alumina (AAO) template were successfully prepared by dual-bath electrodeposition technique. SEM and TEM indicated that the Co/Cu nanowires were regularly spaced and uniform in shape with lengths of about 20 μm and diameters of 80 nm. The bilayer thicknesses of the two samples were 50 nm and 200 nm respectively. XRD test indicated that the Co and Cu grew in their (hcp) and (fcc) polycrystal structures, respectively. VSM test indicated that nanowire arrays had apparent magnetic anisotropy. The giant magnetoresistance (GMR) ratio of the nanowire arrays with the bilayer thickness of 50 nm was about -75%, whereas the bilayer thickness increased to 200 nm, the nanowire arrays had not GMR effect.

Key words: Co/Cu, Multilayer nanowires, GMR, Spin diffusion length (SDL), XRD

MSC2000: 

  • O646