物理化学学报 >> 2007, Vol. 23 >> Issue (10): 1603-1606.doi: 10.3866/PKU.WHXB20071021

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单根TiO2纳米线一维电子输运性能

孙岚; 左娟; 赖跃坤; 聂茶庚; 林昌健   

  1. 固体表面物理化学国家重点实验室,厦门大学化学系,厦门 361005
  • 收稿日期:2007-02-23 修回日期:2007-06-11 发布日期:2007-10-01
  • 通讯作者: 林昌健 E-mail:cjlin@xmu.edu.cn

Electrical Transport Properties of Individual TiO2 Nanowire in One Dimension

SUN Lan; ZUO Juan; LAI Yue-Kun; NIE Cha-Geng; LIN Chang-Jian   

  1. State Key Laboratory of Physical Chemistry of Solid Surfaces, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005,P. R. China
  • Received:2007-02-23 Revised:2007-06-11 Published:2007-10-01
  • Contact: LIN Chang-Jian E-mail:cjlin@xmu.edu.cn

摘要: 采用电化学诱导溶胶-凝胶法, 在多孔氧化铝模板(AAO)的纳米孔道内制备了直径分别为60 和20 nm的锐钛矿型TiO2纳米线阵列. 利用原子力显微镜(AFM)技术, 在半接触模式下得到了TiO2纳米线的形貌像, 在接触模式下测量了单根TiO2纳米线的I-V曲线. TiO2纳米线的电子输运性能表现为半导体的性质. TiO2纳米线的导通电压值明显小于TiO2块体,并且随着TiO2纳米线直径的减小, 导通电压值增大.

关键词: 单根一维纳米线, TiO2, 电子输运性能, I-V曲线

Abstract: The anatase TiO2 nanowire arrays with 60 nm diameter and 20 nm diameter were prepared within the nanochannels of anodic aluminumoxide (AAO) template by an electrochemically induced sol-gel method. Atomic force microscopy (AFM) technique was applied to map topographic image at half-contact mode and to measure current-voltage characteristics of individual TiO2 nanowire at contact mode. The I -V characteristics of individual TiO2 nanowire by AFM revealed semiconductor characteristics. The bias voltage resulting in a measurable current on individual TiO2 nanowire was much lower than that on the bulk TiO2 materials, and its value increased with the diameter of individual nanowire decreasing.

Key words: Individual nanowire in one dimension, TiO2, Electrical transport property, I-V curve

MSC2000: 

  • O649