物理化学学报 >> 2008, Vol. 24 >> Issue (01): 133-137.doi: 10.3866/PKU.WHXB20080123

研究论文 上一篇    下一篇

基于新型硅基化合物衍生物的有机电致发光器件

李青; 于军胜; 李璐; 蒋亚东; 锁钒; 占肖卫   

  1. 电子科技大学光电信息学院, 电子薄膜与集成器件国家重点实验室, 成都 610054; 中国科学院化学研究所有机固体重点实验室, 北京 100080
  • 收稿日期:2007-06-26 修回日期:2007-09-17 发布日期:2008-01-05
  • 通讯作者: 于军胜; 占肖卫 E-mail:jsyu@uestc.edu.cn; xwzhan@iccas.ac.cn

Organic Light-Emitting Diodes Based on New Silole Derivatives

LI Qing; YU Jun-Sheng; LI Lu; JIANG Ya-Dong; SUO Fan; ZHAN Xiao-Wei   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China; Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China
  • Received:2007-06-26 Revised:2007-09-17 Published:2008-01-05
  • Contact: YU Jun-Sheng; ZHAN Xiao-Wei E-mail:jsyu@uestc.edu.cn; xwzhan@iccas.ac.cn

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摘要： 利用真空蒸镀方法, 以两种新型硅基化合物同族衍生物材料BMPSiE(1,2-bis(1-methyl-2,3,4,5-tetraphenyl-1H-Silole-1-yl)ethane)和BMPThSi(1,1’-dimethyl-3,3’,4,4’-tetraphenyl-2,2’,5,5’-tetra(thiophen-2-yl)-1,1’-bi(1 H-silole))为发光层, NPB(N,N’-diphenyl-N,N’-bis (3-methylphenyl)-1,1’-biphenyl-4,4’-diamine)和Alq3(tris (8-hydroxyquinolinolato) aluminum)分别为空穴和电子传输层, 制备了结构简单的高亮度电致发光器件, 表征了器件的光电性能, 并通过器件的能级结构对器件的发光机理进行了讨论. 结果表明, 驱动电压为20 V时, BMPSiE和BMPThSi的三层结构的器件最大亮度分别为9991.9 和15261.5 cd·m-2, 流明效率分别为0.36 和0.31 lm·W-1. 器件发光光谱谱峰位于483和495 nm处, 分别为BMPSiE和BMPThSi的特征光谱, CIE(国际发光照明委员会)色度图坐标为(0.202, 0.337)和(0.246, 0.419),且不随外加电压的改变而变化.

关键词: 有机电致发光器件, 硅基化合物, 真空蒸镀, 能级结构, 器件性能

Abstract: Two light emissive organic light-emitting diodes (OLEDs) of high performance were prepared by vacuum thermal evaporation using two kinds of silole derivatives 1,2-bis (1-methyl-2,3,4,5-tetraphenyl-1H-silole-1-yl)ethane (BMPSiE) and 1,1’-dimethyl-3,3’,4,4’-tetraphenyl-2,2’,5,5’-tetra(thiophen-2-yl)-1,1’-bi(1H-silole) (BMPThSi) as emitting materials, N, N’-diphenyl-N,N’-bis(3-methylphenyl)-1,1’-biphenyl-4,4’-diamine(NPB) and tris(8-hydroxyquinolinolato) aluminum(Alq3) as hole transporting layer (HTL) and electron transporting layer (ETL), respectively. The luminance-voltage and current density-voltage characteristics of devices were investigated, and the difference between their performances was discussed. The results demonstrate that at a bias voltage of 20 V, the device consisting of novel emissive material BMPSiE had a maximum luminance of 9991.9 cd·m-2 and the device of BMPThSi had a maximumluminance of 15261.5 cd·m-2. The peaks of electroluminescence (EL) spectra were located at 483 and 495 nm, respectively, which were in good accordance with the photoluminescent characteristics. The Commissions International d’Eclairage (CIE) coordinates were located at (0.202, 0.337) and (0.246, 0.419), which were independent on the variation of forward bias.

Key words: OLEDs, Silole, Vacuumthermal evaporation, Energy level, Devices performance

MSC2000: 

  • O644