物理化学学报 >> 2008, Vol. 24 >> Issue (01): 147-151.doi: 10.3866/PKU.WHXB20080126

研究简报 上一篇    下一篇

铝阳极氧化膜的半导体特性

赵景茂; 谷丰; 赵旭辉; 左禹   

  1. 北京化工大学材料科学与工程学院, 北京 100029
  • 收稿日期:2007-07-17 修回日期:2007-09-12 发布日期:2008-01-05
  • 通讯作者: 赵景茂 E-mail:jingmaozhao@126.com

Semiconductor Properties of Anodic Oxide Film Formed on Aluminum

ZHAO Jing-Mao; GU Feng; ZHAO Xu-Hui; ZUO Yu   

  1. College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, P. R. China
  • Received:2007-07-17 Revised:2007-09-12 Published:2008-01-05
  • Contact: ZHAO Jing-Mao E-mail:jingmaozhao@126.com

摘要: 采用Mott-Schottky理论结合氧化膜点缺陷模型(PDM)研究了工业纯铝L2阳极氧化膜的半导体性质, 分别计算了沸水封闭和重铬酸钾封闭后阳极氧化膜的施主浓度、氧空穴扩散系数及平带电位. 结果表明, 铝阳极氧化膜封闭前后都具有n型半导体性质, 且施主浓度随着电压的升高呈指数递减. 使用不同方法封闭的阳极氧化膜的氧空穴扩散系数为(1.12-5.53)伊10-14 cm-2·s-1, 封闭后阳极氧化膜平带电位降低.

关键词: 工业纯铝; 阳极氧化膜; 半导体; Mott-Schottky曲线

Abstract: The semiconductor properties of anodic oxide film formed on commercial pure aluminum were analyzed usingMott-Schottky theory and point defect model (PDM). The donor density, oxygen vacancy diffusion coefficient and flat-band potential were measured for the oxide films sealed by boiling water and K2Cr2O7, respectively. The results indicated that the anodic oxide films showed the n-type semiconductor property and the donor density decreased exponentially with the voltage elevating. The value of oxygen vacancy diffusion coefficient is about (1.12-5.53)伊10-14 cm-2·s-1. The flat-band potential of anodic oxide filmdeclined after sealing.

Key words: Commercial pure aluminum, Anodic oxide film, Semiconductor, Mott-Schottky plot

MSC2000: 

  • O646