物理化学学报 >> 2008, Vol. 24 >> Issue (02): 355-358.doi: 10.3866/PKU.WHXB20080230

研究简报 上一篇    

GaN纳米棒的催化合成及其发光特性

陈金华; 薛成山; 庄惠照; 李红; 秦丽霞; 杨兆柱   

  1. 山东师范大学半导体研究所, 济南 250014
  • 收稿日期:2007-09-12 修回日期:2007-10-18 发布日期:2008-01-26
  • 通讯作者: 薛成山 E-mail:xuechengshan@sdnu.edu.cn

Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods

CHEN Jin-Hua; XUE Cheng-Shan; ZHUANG Hui-Zhao; LI Hong; QIN Li-Xia; YANG Zhao-Zhu   

  1. Institute of Semiconductors, Shandong Normal University, Jinan 250014, P. R. China
  • Received:2007-09-12 Revised:2007-10-18 Published:2008-01-26
  • Contact: XUE Cheng-Shan E-mail:xuechengshan@sdnu.edu.cn

摘要: 使用稀土元素Tb作催化剂, 通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜, 成功制备出GaN纳米棒. X射线衍射测试显示, GaN纳米棒具有六方结构. 利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出, 纳米棒为单晶GaN, 纳米棒的直径为50-150 nm, 长度约10 μm. 光致发光谱在368.6 nm处有一强的紫外发光峰, 说明纳米棒具有良好的发光特性. 讨论了GaN纳米棒的生长机制.

关键词: GaN, 纳米棒, 单晶, 发光

Abstract: Rare earth metal seed Tb was employed for the growth of GaNnanorods. GaNnanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN. Observations using scanning electron microscopy and high-resolution transmission electron microscopy showed that GaN was of single-crystal nanorod structure, with diameter 50-150 nm and length about 10 μm. Photoluminescence spectrum showed a strong UV emission peak at 368.6 nm, indicating that the products possess good luminescent characteristics. The growth mechanismof GaN nanorods was also discussed.

Key words: GaN, Nanorods, Single crystal, Luminescence

MSC2000: 

  • O644