物理化学学报 >> 2008, Vol. 24 >> Issue (09): 1703-1708.doi: 10.3866/PKU.WHXB20080931

研究简报 上一篇    下一篇

耐蚀Zn-Al合金材料的组合材料芯片方法优选

霍伟亮; 刘庆峰; 刘茜; 朱丽慧; 王利   

  1. 中国科学院上海硅酸盐研究所, 高性能陶瓷和超微结构国家重点实验室, 上海 200050; 上海大学材料科学与工程学院, 上海 200072; 宝山钢铁股份有限公司技术中心, 上海 201900
  • 收稿日期:2008-03-21 修回日期:2008-05-14 发布日期:2008-09-10
  • 通讯作者: 刘茜 E-mail:qianliu@sunm.shcnc.ac.cn

Application of Combinatorial Material Chip Method in Screening of Anticorrosion Zn-Al Alloy

HUO Wei-Liang; LIU Qing-Feng; LIU Qian; ZHU Li-Hui; WANG Li   

  1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China; College of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China; Baosteel Technology Center, Baoshan Iron&Steel Co., Shanghai 201900, P. R. China
  • Received:2008-03-21 Revised:2008-05-14 Published:2008-09-10
  • Contact: LIU Qian E-mail:qianliu@sunm.shcnc.ac.cn

摘要: 应用组合材料芯片方法, 通过离子束溅射法制备了全组分范围的Zn-Al薄膜样品阵列. 沉积得到的多层薄膜经370 ℃扩散处理2 h形成合金薄膜. 通过扫描俄歇能谱仪(AES)、X射线衍射仪(XRD)及扫描电子显微镜(SEM)对样品的成分、结构和形貌进行表征. 结果显示, 在低温退火后, 合金薄膜成分均匀, 结晶良好, 表面致密. 材料芯片上的样品在0.1 mol·L-1氯化钠溶液中的极化电阻测试结果表明, 对于全组分的Zn-Al合金薄膜, Al摩尔分数在87%附近的成分具有最高的极化电阻值.进一步的实验发现, 在83%-86%这一较宽的摩尔分数区间内, 极化电阻值均保持在105 Ω·cm-2以上, 比传统热镀锌镀层的极化电阻高1个数量级.

关键词: 组合材料芯片技术, 锌铝合金薄膜, 耐腐蚀性能, 离子束溅射

Abstract: Using combinational chip method, all-components Zn-Al film samples were prepared via ion beam sputtering. The as-deposited multilayer films were transformed into alloy films after annealing in Ar/H2 atmosphere for 2 h at 370 ℃. The compositom, structure, and morphology of the alloy films were characterized using Auger electron spectrum (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The results indicated that homogeneous alloy films with good crystallinity and dense surface were attained after low temperature annealing. The polarization resistance tests in 0.1 mol·L-1 NaCl for characterization of anti-corrosion properties indicated that the Zn-Al alloy thin films with Al mole fraction of about 87% possessed the highest polarization resistance. Further experiments showed that the polarization resistances of Zn-Al alloy thin films with Al mole fraction from 83% to 86% were all higher than 105 Ω·cm-2, which was one order higher than that of hot dip galvanizing coating.

Key words: Combinatorial material chip method, Zinc-aluminumalloy thin film, Anti-corrosion property, Ion beam sputtering

MSC2000: 

  • O646