物理化学学报 >> 2009, Vol. 25 >> Issue (08): 1523-1529.doi: 10.3866/PKU.WHXB20090749

研究论文 上一篇    下一篇

纳米二氧化钒薄膜的制备及红外光学性能

梁继然, 胡明, 王晓东, 李贵柯, 季安, 杨富华, 刘剑, 吴南健, 陈弘达   

  1. 天津大学电子信息工程学院, 天津 300072|中国科学院半导体研究所, 半导体集成技术工程研究中心, 北京 100083|中国科学院半导体研究所, 半导体超晶格国家重点实验室, 北京 100083|中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京 100083
  • 收稿日期:2009-01-02 修回日期:2009-03-30 发布日期:2009-07-16
  • 通讯作者: 梁继然 E-mail:liang_jiran@tju.edu.cn

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

LIANG Ji-Ran, HU Ming, WANG Xiao-Dong, LI Gui-Ke, JI An, YANG Fu-Hua, LIU Jian, WU Nan-Jian, CHEN Hong-Da   

  1. School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, P. R. China|Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China|State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China|State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
  • Received:2009-01-02 Revised:2009-03-30 Published:2009-07-16
  • Contact: LIANG Ji-Ran E-mail:liang_jiran@tju.edu.cn

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摘要：

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示，纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.

关键词: 双离子束溅射, 纳米二氧化钒薄膜, 透射率

Abstract:

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 ℃ for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 ℃, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin filmwith smaller grains is an ideal material for application in optical switching devices.

Key words: Dual ion beamsputtering, Nano-vanadiumdioxide thin film, Transmission

MSC2000: 

  • O648