物理化学学报 >> 2009, Vol. 25 >> Issue (09): 1721-1724.doi: 10.3866/PKU.WHXB20090908

研究论文 上一篇    下一篇

铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构的制备及表征

齐俊杰, 杨亚, 廖庆亮, 黄运华, 刘娟, 张跃   

  1. 北京科技大学材料物理与化学系, 北京 100083|北京科技大学新金属材料国家重点实验室, 北京 100083
  • 收稿日期:2009-03-05 修回日期:2009-06-04 发布日期:2009-09-03
  • 通讯作者: 张跃 E-mail:yuezhang@ustb.edu.cn

Fabrication and Characterization of In/ZnO-SiOx Core-Shell Nanocable Heterostructures

QI Jun-Jie, YANG Ya, LIAO Qing-Liang, HUANG Yun-Hua, LIU Juan, ZHANG Yue   

  1. Department of Materials Physics&Chemistry, University of Science and Technology Beijing, Beijing 100083, P. R. China|State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
  • Received:2009-03-05 Revised:2009-06-04 Published:2009-09-03
  • Contact: ZHANG Yue E-mail:yuezhang@ustb.edu.cn

摘要:

利用碳热还原反应气相沉积法制备了铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构. X射线衍射(XRD)、透射电子显微镜(TEM)及X射线能谱(EDS)研究表明, 纳米电缆内芯为结晶完好的单晶纤锌矿结构, 外壳包覆一层氧化硅非晶层. 纳米电缆直径为30-60 nm, 长径比大于100. 掺杂纳米异质结构的生长机理与传统的金属晶种辅助气-液-固(VLS)机理有所不同. 这种掺杂纳米异质结构有望作为理想的结构单元应用于纳米器件领域.

关键词: 纳米结构, In-掺杂, 氧化锌, 纳米电缆, 生长机理

Abstract:

Indiumdoped ZnO-SiOx core-shell nanocable heterostructures were successfully fabricated by introducing In ions into the raw material via a simple thermal evaporation process. X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) were used to investigate the structure of the In/ZnO-SiOx core-shell fibers. Results indicated that the core zone of ZnO nanocables is single crystalline In/ZnO with a wurtzite structure and the shell zone is a SiOx amorphous layer. The nanocables have high aspect ratio of more than 100 with widths of 30-60 nm. The growth mechanismof the nanocable heterostructures is different fromthe commonly reported metal-seeded vapor-liquid-solid (VLS) mechanism. The synthesis of core-shell structures reveals the general potential of radial heterostructure growth for the development of nanowire-based devices.

Key words: Nanostructure, In-doping, ZnO, Nanocable, Growth mechanism

MSC2000: 

  • O641