物理化学学报 >> 2009, Vol. 25 >> Issue (12): 2445-2449.doi: 10.3866/PKU.WHXB20091125

研究论文 上一篇    下一篇

单步电沉积法制备CuInS2薄膜

李娟, 莫晓亮, 孙大林, 陈国荣   

  1. 复旦大学材料科学系, 上海 200433
  • 收稿日期:2009-06-05 修回日期:2009-09-12 发布日期:2009-11-27
  • 通讯作者: 莫晓亮, 陈国荣 E-mail:grchen@fudan.edu.cn

Preparation of CuInS2 Thin Films by One-Step Electrodeposition

LI Juan, MO Xiao-Liang, SUN Da-Lin, CHEN Guo-Rong   

  1. Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
  • Received:2009-06-05 Revised:2009-09-12 Published:2009-11-27
  • Contact: MO Xiao-Liang, CHEN Guo-Rong E-mail:grchen@fudan.edu.cn

摘要:

采用单步电沉积法在Mo基底上制备了高质量的CuInS2薄膜. 用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了样品的结构和形貌, 研究了沉积电位、退火温度、pH值、反应物浓度等工艺条件对制备的CuInS2薄膜形貌、组分及性能的影响. 制备的CuInS2薄膜致密平整, 呈黄铜矿结构, 晶粒大小为1-2 μm. 用紫外-可见光分光光度计测试了其光学性能, 计算得到常温下禁带宽度为1.41 eV, 非常适合用作薄膜太阳电池的吸收层材料.

关键词: 太阳电池, CuInS2, 单步电沉积法, 沉积电位, 退火温度

Abstract:

I-III-VI2 ternary chalcopyrite copper indium disulfide (CuInS2) films were prepared by one-step electrodeposition technique on molybdenum substrates. The structure and morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The effects of deposition potential, annealing temperature, pH, and solution concentration on the formation of the electrodeposited thin films were investigated. The prepared CuInS2 thin films were found to be compact and uniform with grain sizes of 1-2 μm. Their optical property was characterized by UV-Vis spectrophotometry and the bandgap value was calculated to be 1.41 eV.

Key words: Solar cell, CuInS2, One-step electrodeposition, Deposition potential, Annealing temperature

MSC2000: 

  • O649