物理化学学报 >> 2011, Vol. 27 >> Issue (02): 432-436.doi: 10.3866/PKU.WHXB20110231

电化学和新能源 上一篇    下一篇

硒蒸气浓度对制备CIGS薄膜的影响

廖成, 韩俊峰, 江涛, 谢华木, 焦飞, 赵夔   

  1. 北京大学核物理与核技术国家重点实验室, 北京 100871
  • 收稿日期:2010-11-03 修回日期:2010-12-05 发布日期:2011-01-25
  • 通讯作者: 廖成 E-mail:CLiao@pku.edu.cn
  • 基金资助:

    北京市自然科学基金(H030630010120)资助项目

Effect of Se Vapor Concentration on CIGS Film Preparation

LIAO Cheng, HAN Jun-Feng, JIANG Tao, XIE Hua-Mu, JIAO Fei, ZHAO Kui   

  1. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, P. R. China
  • Received:2010-11-03 Revised:2010-12-05 Published:2011-01-25
  • Contact: LIAO Cheng E-mail:CLiao@pku.edu.cn
  • Supported by:

    The project was supported by the Natural Science Foundation of Beijing, China (H030630010120).

摘要:

采用“预制层硒化法”制备CuIn1-xGaxSe2 (CIGS)薄膜. 基于自主设计的“双层管式硒化装置”, 通过控制硒蒸气浓度优化退火工艺, 研究硒蒸气浓度对薄膜光电性能的影响. 利用俄歇电子能谱(AES)和X射线衍射分析(XRD)等手段对不同硒浓度氛围下生成的CIGS薄膜的成分和物相进行表征, 并在AM1.5、1000 W·m-2的标准光照条件下比较相应CIGS电池器件的输出性能. 实验结果表明: 饱和硒蒸气下退火得到的样品, 基底钼膜遭到严重腐蚀破坏, 失去背电极功能; 在低浓度硒气氛下退火不能有效消除CIGS薄膜的偏析和缺陷, 以致光电转换效率低; 而在无硒惰性氛围下退火的样品, 生成了物相均一化的CIGS薄膜, 由此制备的CIGS电池取得了8.5%的转换效率.

关键词: 双层管式硒化装置, 预制层硒化法, 饱和硒蒸气, 退火, 偏析

Abstract:

We applied the “selenization of stack element layers” method to the preparation of CuIn1-xGaxSe2 (CIGS) films. The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied. Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively. The output performance of the CIGS device was also measured under AM1.5 1000 W·m-2 illumination. The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing. Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film. The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5% was obtained.

Key words: Bi-layer tubular selenization facility, Selenization of stack element layer, Saturated selenium vapor, Annealing, Segregation

MSC2000: 

  • O649