物理化学学报 >> 2011, Vol. 27 >> Issue (03): 749-753.doi: 10.3866/PKU.WHXB20110310

材料物理化学 上一篇    下一篇

利用钛保护层在ITO电极上直接制备大面积的超薄氧化铝膜

肖立新, 段来强, 柴俊一, 王芸, 陈志坚, 曲波, 龚旗煌   

  1. 北京大学物理学院, 人工微结构和介观物理国家重点实验室, 北京 100871
  • 收稿日期:2010-10-12 修回日期:2010-12-20 发布日期:2011-03-03
  • 通讯作者: 肖立新, 龚旗煌 E-mail:lxxiao@pku.edu.cn;qhgong@pku.edu.cn
  • 基金资助:

    国家基础科学人才培养基金(J0630311), 国家自然科学基金(10934001, 60907015, 10821062)及国家重点基础研究发展规划项目(973) (2007CB307000, 2009CB930504)资助

Fabrication of Large Area of Anodic Aluminum Oxide Ultrathin Film Directly onto an ITO Electrode with a Ti Buffer Layer

XIAO Lixin, DUAN Laiqiang, CHAI Junyi, WANG Yun, CHEN Zhijian, QU Bo, GONG Qihuang   

  1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China
  • Received:2010-10-12 Revised:2010-12-20 Published:2011-03-03
  • Contact: XIAO Li-Xin, GONG Qi-Huang E-mail:lxxiao@pku.edu.cn;qhgong@pku.edu.cn
  • Supported by:

    The project was supported by the National Found for Fostering Talents of Basic Science (NFFTBS) (J0630311), National Natural Science Foundation of China (10934001, 60907015, 10821062) and National Key Basic Research Program of China (973) (2007CB307000, 2009CB930504).

摘要:

通过磁控溅射并引入钛保护层, 利用在0.3 mol·L-1硫酸中20 V电压下二次阳极氧化, 在氧化铟锡(ITO)导电玻璃衬底上直接制备了超薄(约140 nm, 为阳极氧化前Al厚度的一半)、大面积(约4 cm2)的多孔阳极氧化铝(AAO). 扫描电子显微镜结果表明生成的微孔与衬底垂直, 孔径和孔间距分别约为30和60 nm. 我们发现钛保护层的作用是提高了Al层的附着性并且防止ITO被腐蚀, 在此体系中钛不能被其它的金属如铬、金、银或铜代替. 紫外-可见光谱透过率结果显示在阳极氧化过程中Ti被氧化成为透明的TiO2, 利用10-20 nm的钛保护层以及二次阳极氧化过程, 能够保证高透明度. 在ITO上直接制备的这种透明、有序的AAO纳米结构在光子学、光伏领域和纳米制备等方面具有潜在应用.

关键词: 阳极氧化铝, 薄膜, 氧化铟锡透明电极, 钛保护层, 磁控射频溅射

Abstract:

An anodic aluminum oxide (AAO) ultrathin film (~140 nm, about half the thickness of the original Al film) was successfully fabricated directly onto an indium tin oxide (ITO) electrode without the erosion of ITO by a two-step anodization process in 0.3 mol·L-1 O2SO4 solution at a constant voltage of 20 V. Here, a thin titanium buffer layer was included between the ITO electrode and the Al film by radio frequency (RF) magnetron sputtering. A large area (about 4 cm2) of porous alumina with nanoscaled channels perpendicular to the substrates was obtained. The average pore diameter and the pore interspace were approximately 30 and 60 nm, respectively. We found that the Ti buffer layer with a thickness of 10-40 nm between the Al layer and the ITO substrate played a critical role in improving the adhesion and ensuring ITO protection, which could not be duplicated by other metals, e.g., Cr, Au, Ag, and Cu. UV-visible transmittance spectra confirmed that the Ti buffer layer was oxidized and became transparent TiO2 and that 10-20 nm of the Ti buffer layer together with the two-step anodization process is suitable for high transparency. Therefore, the AAO specimen possessing a high nanoscale regularity and transparency may have potential use in photonics, photovoltaics, and nanofabrications.

Key words: Anodic aluminum oxide, Ultrathin film, ITO transparent electrode, Titanium buffer layer, Radio frequency magnetron sputtering

MSC2000: 

  • O646