物理化学学报 >> 2011, Vol. 27 >> Issue (05): 1232-1238.doi: 10.3866/PKU.WHXB20110422

材料物理化学 上一篇    下一篇

磁控溅射中靶-基底距离与Si共掺对ZnO:Al薄膜性质的影响

徐浩1,2, 陆昉1, 傅正文2   

  1. 1. 上海市分子催化和功能材料重点实验室, 表面物理实验室和物理系, 复旦大学, 上海 200433;
    2. 化学系和激光化学研究所, 复旦大学, 上海200433
  • 收稿日期:2010-12-20 修回日期:2011-03-04 发布日期:2011-04-28
  • 通讯作者: 傅正文 E-mail:zhengwen@sh163.net
  • 基金资助:

    上海科学技术委员会(08DZ2270500, 09JC1401300), 国家自然科学基金(20773031), 国家重点基础研究发展规划(973) (2007CB209702), 国家高技术研究发展计划(863) (2007AA03Z322)资助项目

Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering

XU Hao1,2, LU Fang1, FU Zheng-Wen2   

  1. 1. Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Surface Physics Laboratory & Department of Physics, Fudan University, Shanghai 200433, P. R. China;
    2. Department of Chemistry & Laser Chemistry Institute, Fudan University, Shanghai 200433, P. R. China
  • Received:2010-12-20 Revised:2011-03-04 Published:2011-04-28
  • Contact: FU Zheng-Wen E-mail:zhengwen@sh163.net
  • Supported by:

    The project was supported by the Science & Technology Commission of Shanghai Municipality (08DZ2270500, 09JC1401300), National Natural Science Foundation of China (20773031), National Key Basic Research Program of China (973) (2007CB209702), and National High-Tech Research and Development Program of China (863) (2007AA03Z322).

摘要:

使用射频磁控溅射, 在正方形石英衬底上沉积透明导电掺Al的ZnO(AZO)和Si共掺AZO(AZO:Si)薄膜. 系统研究了靶-基底距离(Dst)和Si共掺对AZO薄膜电学、光学性质的影响. 电阻率、载流子浓度和迁移率都强烈地依赖于靶-基底距离, 随着靶-基底距离的减少, 载流子浓度和迁移率都有显著的增加, 电导率也随之提高. 在靶-基底距离为4.5 cm处, 得到最低电阻率4.94×10-4 Ω·cm, 此时的载流子浓度和迁移率分别是3.75×1020 cm-3和33.7 cm2·V-1·s-1. X射线光电子能谱(XPS)、X射线衍射(XRD)和边界散射模型被用于分析载流子浓度、迁移率和靶-基底距离的关系. 透射谱显示, 在可见-近红外范围内所有样品均有大于93%的平均透射率, 同时随着靶基距离的减少, 吸收边蓝移. AZO:Si表现出可与AZO相比拟的高电导和高透射光学特性, 但在热湿环境中却有着更好的电阻稳定性, 这在实际使用中很有意义.

关键词: AZO, AZO:Si, 靶-基底距离, 射频磁控溅射

Abstract:

Transparent conductive Al-doped ZnO (AZO) and Si-codoped AZO (AZO:Si) films were deposited on square quartz substrates by radio frequency (RF) magnetron sputtering. The effect of distance between the substrate and target (Dst) and the effect of co-doping Si on the electrical and optical properties of the AZO films were systematically investigated. The resistivity, carrier concentration, and mobility were found to be strongly dependent on the Dst values. With a decrease in Dst, the carrier concentration and mobility increased significantly, which resulted in improved conductivity. The lowest resistivity of 4.94×10-4 Ω·cm was obtained at a Dst of 4.5 cm, and this was associated with a carrier concentration of 3.75×1020 cm-3 and a mobility of 33.7 cm2·V-1·s-1. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) spectroscopy, and grain boundary scattering models were used to analyze the relationship between the carrier concentration and the mobility at different deposition (Dst) values. Transmittance spectra showed an average transmittance of >93% in the visible-near infrared range for all the samples and a blue shift of the absorption edge with a decrease in Dst. AZO:Si films had high-conductance and high-transmittance optical properties compared with AZO films, and they had better resistivity stability than the AZO films when exposed to a hot and damp atmosphere, which is practically meaningful.

Key words: AZO, AZO:Si, Substrate-target distance, Radio frequency magnetron sputtering

MSC2000: 

  • O649