物理化学学报 >> 2011, Vol. 27 >> Issue (05): 1249-1253.doi: 10.3866/PKU.WHXB20110430

材料物理化学 上一篇    下一篇

化学气相沉积法制备Sn2S3一维纳米结构阵列

彭跃华, 周海青, 刘湘衡, 何熊武, 赵丁, 海阔, 周伟昌, 袁华军, 唐东升   

  1. 湖南师范大学低维量子结构与调控教育部重点实验室, 物理与信息科学学院, 长沙 410081
  • 收稿日期:2010-10-25 修回日期:2011-01-10 发布日期:2011-04-28
  • 通讯作者: 唐东升 E-mail:dstang@hunnu.edu.cn
  • 基金资助:

    教育部新世纪优秀人才支持计划(NCET-07-0278)、湖南省杰出青年基金(08JJ1001)、湖南省自然科学基金(07JJ6009)和湖南师范大学青年优秀人才培养计划(070623)资助

Preparation of Sn2S3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition

PENG Yue-Hua, ZHOU Hai-Qing, LIU Xiang-Heng, HE Xiong-Wu, ZHAO Ding, HAI Kuo, ZHOU Wei-Chang, YUAN Hua-Jun, TANG Dong-Sheng   

  1. Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, P. R. China
  • Received:2010-10-25 Revised:2011-01-10 Published:2011-04-28
  • Contact: TANG Dong-Sheng E-mail:dstang@hunnu.edu.cn
  • Supported by:

    The project was supported by the Program for New Century Excellent Talents in Ministry of Education, China (NCET-07-0278), Excellent Youth Foundation of Hunan Scientific Committee, China (08JJ1001), Natural Science Foundation of Hunan Province, China (07JJ6009) and Program for Excellent Talents in Hunan Normal University, China (070623).

摘要:

运用化学气相沉积法(CVD), 直接以Sn和S为原料分区加热蒸发, 通过控制温度分布、气压、载气流量和金属铅纳米颗粒分布等宏观实验条件, 成功制备大面积Sn2S3一维纳米结构阵列. 扫描电子显微镜(SEM)图片显示: Sn2S3一维纳米结构的横向尺度在100 nm左右, 长约几个微米. X射线衍射(XRD)谱显示: 所制备样品的晶体结构属于正交晶系, 沿[002]方向生长. 紫外-可见漫反射谱表明Sn2S3一维纳米结构是带隙为2.0 eV的直接带隙半导体. 讨论了温度分布和金属铅纳米颗粒对Sn2S3一维纳米结构生长的影响, 并指出其生长可能遵循气-固(V-S)生长机理.

关键词: 一维纳米结构, 阵列, 化学气相沉积法, 三硫化二锡, 气-固生长机理

Abstract:

We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition (CVD). Scanning electron microscopy (SEM) showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction (XRD) results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the [002] direction. Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV. The growth of Sn2S3 nanowires is governed by the vapor-solid (V-S) growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.

Key words: One-dimensional nanostructure, Array, Chemical vapor deposition, Sn2S3, Vapor-solid growth mechanism

MSC2000: 

  • O643