物理化学学报 >> 2011, Vol. 27 >> Issue (06): 1531-1536.doi: 10.3866/PKU.WHXB20110632

材料物理化学 上一篇    下一篇

沉积温度对等离子增强化学气相沉积法制备的SiNx:H薄膜特性的影响

闻震利, 曹晓宁, 周春兰, 赵雷, 李海玲, 王文静   

  1. 中国科学院电工研究所, 太阳能热利用及光伏系统重点实验室, 北京 100190
  • 收稿日期:2011-01-18 修回日期:2011-03-26 发布日期:2011-05-31
  • 通讯作者: 王文静 E-mail:wangwj@mail.iee.ac.cn
  • 基金资助:

    国家高技术研究发展计划(2007AA052437)和中国科学院知识创新工程重要方向项目(KGCX2-YW-382)资助

Influence of Deposition Temperature on the SiNx:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition

WEN Zhen-Li, CAO Xiao-Ning, ZHOU Chun-Lan, ZHAO Lei, LI Hai-Ling, WANG Wen-Jing   

  1. Key Laboratory Solar Thermal Energy and Photovoltaic Systems, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China
  • Received:2011-01-18 Revised:2011-03-26 Published:2011-05-31
  • Contact: WANG Wen-Jing E-mail:wangwj@mail.iee.ac.cn
  • Supported by:

    The project was supported by the National High-Tech Research and Development Program of China (863) (2007AA052437) and Main Direction of Knowledge Innovation Program of the Chinese Academy of Sciences (KGCX2-YW-382).

摘要:

利用Centrotherm公司生产的管式等离子增强化学气相沉积(PECVD)设备在p型抛光硅片表面沉积SiNx:H薄膜, 研究沉积温度对SiNx:H薄膜的组成及光学特性、结构及表面钝化特性的影响. 然后采用工业化的单晶硅太阳电池制作设备和工艺制作太阳电池, 研究不同温度制备的薄膜对电池电性能的影响. 测试结果表明: SiNx:H薄膜的折射率随着沉积温度的升高而变大, 分布在1.926-2.231之间, 这表明Si/N摩尔比随着沉积温度的增加而增加; 当沉积温度增加时, 薄膜中Si-H键和N-H键浓度呈现减小趋势, 而Si-N键浓度逐渐升高, 薄膜致密度增加; 随着沉积温度的升高, SiNx:H薄膜中的氢析出导致了钝化硅片的有效少子寿命先升高后降低, 并且有效少子寿命出现明显的时间衰减特性. 当沉积温度为450 °C时, 薄膜具有最优的减反射和表面钝化效果. 采用不同温度PECVD制备的5组电池的电性能测试结果也验证了这一结果.

关键词: SiNx:H薄膜, 沉积温度, 结构特性, 钝化, 太阳电池, 效率

Abstract:

Hydrogenated silicon nitride films were prepared on the p-type polished silicon substrates by the direct plasma enhanced chemical vapor deposition (PECVD). The influences of deposition temperature on the composition, optical characteristics, structural characteristics, and passivation characteristics of the SiNx:H film were studied. All the solar cell devices were fabricated using industrial state-of-art crystal silicon solar cell technology. The influence of deposition temperature on the as-fabricated cell's electrical performance is demonstrated. The refractive index of the film ranges from 1.926 to 2.231 and it increases with an increase in the deposition temperature. This shows that the Si/N mole ratio also increases with deposition temperature. The Si-H bond and the N-H bond break and form a new Si-N bond when the deposition temperature is higher. This increase in the Si-N concentration results in an increase in film density. The effective minor carrier lifetime of the coated wafer increases initially with the substrate temperature. At a temperature of 450 °C the effective minor carrier lifetime begins to decrease. This phenomenon can be explained by H extraction from the film. For all the samples, the effective minor carrier lifetime degrades with time. The SiNx:H film prepared at a deposition temperature of 450 °C shows the best anti-reflection and surface passivation properties. The electrical performance of the fully functional solar cells is also demonstrated and the optimized results are highlighted and discussed.

Key words: SiNx:H thin film, Deposition temperature, Structural property, Passivation, Solar cell, Efficiency

MSC2000: 

  • O644