物理化学学报 >> 2011, Vol. 27 >> Issue (08): 1893-1899.doi: 10.3866/PKU.WHXB20110832

电化学和新能源 上一篇    下一篇

吲哚方酸菁半导体在场效应晶体管中的应用

孙秋健, 董桂芳, 郑海洋, 赵昊岩, 乔娟, 段炼, 王立铎, 张复实, 邱勇   

  1. 有机光电子与分子工程教育部重点实验室, 清华大学化学系, 北京 100084
  • 收稿日期:2011-05-11 修回日期:2011-06-15 发布日期:2011-07-19
  • 通讯作者: 董桂芳, 邱勇 E-mail:donggf@mail.tsinghua.edu.cn. qiuy@mail.tsinghua.edu.cn
  • 基金资助:

    国家自然科学基金(60877026, 50990062)和国家重点基础研究发展规划 (973) (2009CB930602)资助项目

Indolium Squarine Semiconductor for Field-Effect Transistors

SUN Qiu-Jian, DONG Gui-Fang, ZHENG Hai-Yang, ZHAO Hao-Yan, QIAO Juan, DUAN Lian, WANG Li-Duo, ZHANG Fu-Shi, QIU Yong   

  1. Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
  • Received:2011-05-11 Revised:2011-06-15 Published:2011-07-19
  • Contact: DONG Gui-Fang, QIU Yong E-mail:donggf@mail.tsinghua.edu.cn. qiuy@mail.tsinghua.edu.cn
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (60877026, 50990062) and National Key Basic Research and Development Program of China (973) (2009CB930602).

摘要:

研究了2,3,3-三甲基-1-H-吲哚方酸菁的场效应性质, 通过X射线衍射证实了方酸菁分子内电荷分离结构以及分子间面面堆积模式, 并在Si/SiO2基片上通过真空蒸镀和旋涂的方法制备了p型晶体管器件. 通过对器件性能与沟道形态的研究, 我们发现退火处理能促进方酸菁薄膜由无定形态向多晶态转变, 从而使薄膜晶体管的迁移率从10-5 cm2?V-1?s-1量级提高到10-3 cm2?V-1?s-1量级. 顶接触结构单晶器件获得了7.8×10-2 cm2?V-1?s-1的迁移率. 未封装的方酸菁晶体管在大气中也表现出较好的稳定性.

关键词: 方酸菁内盐, 有机晶体管, 旋涂, 单晶, 退火

Abstract:

An indolium squarine 1,3-bis[(3,3-dimethylindolin-2-ylidene)methyl]squaraine was investigated as a semiconductor for use in organic field-effect transistors. Intramolecular charge separation and face to face packing were found by X-ray crystallography. p-Type thin film transistors were fabricated on Si/SiO2 substrates by thermal evaporation and spin-coating. By channel state research we found that annealing could improve the polycrystallization of the semiconductor film from the amorphous state and device mobility improved from 10-5 to 10-5 cm2·V-1·s-1. The highest mobility of 7.8×10-2 cm2·V-1·s-1 was achieved in a top contact single crystal device. ISQ transistors were also stable in air without encapsulation.

Key words: Squarylium inner salt, Organic transistor, Spin coating, Single crystal, Annealing

MSC2000: 

  • O646