物理化学学报 >> 2015, Vol. 31 >> Issue (6): 1207-1214.doi: 10.3866/PKU.WHXB201504142

材料物理化学 上一篇    

nc-Si:H/c-Si硅异质结太阳电池中本征硅薄膜钝化层的优化

乔治1,2, 解新建1, 薛俊明3, 刘辉1, 梁李敏1, 郝秋艳1, 刘彩池1   

  1. 1 河北工业大学光电功能晶体材料河北省工程实验室, 天津300130;
    2 石家庄铁道大学数理系应用物理研究所, 石家庄050043;
    3 河北汉盛光电科技有限公司, 河北衡水053000
  • 收稿日期:2015-01-05 修回日期:2015-04-09 发布日期:2015-06-05
  • 通讯作者: 刘彩池 E-mail:ccliu@hebut.edu.cn
  • 基金资助:

    国家高技术研究发展计划项目(863) (2012AA050301)和河北省教育厅科研计划项目(Z2010304)资助

Optimization of Intrinsic Silicon Passivation Layers in nc-Si:H/c-Si Silicon Heterojunction Solar Cells

QIAO Zhi1,2, XIE Xin-Jian1, XUE Jun-Ming3, LIU Hui1, LIANG Li-Min1, HAO Qiu-Yan1, LIU Cai-Chi1   

  1. 1 Engineering Laboratory of Photoelectric Functional Crystals in Hebei Province, Hebei University of Technology, Tianjin 300130, P. R. China;
    2 Institue of Applied Physics, Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043, P. R. China;
    3 China Hisun PV Technology Co., Ltd., Hengshui 053000, Hebei Province, P. R. China
  • Received:2015-01-05 Revised:2015-04-09 Published:2015-06-05
  • Contact: LIU Cai-Chi E-mail:ccliu@hebut.edu.cn
  • Supported by:

    The project was supported by the National High Technology Research and Development Program of China (863) (2012AA050301) and Scientific Research Program of Hebei Education Department, China (Z2010304).

摘要:

采用射频等离子体增强化学气相沉积(RF-PECVD)法在低温、低功率的条件下制备了一系列本征硅薄膜, 研究了硅烷浓度(CS)对薄膜微结构、光电特性及表面钝化性能的影响. 将本征硅薄膜作为钝化层应用到氢化纳米晶硅/晶硅(nc-Si:H/c-Si)硅异质结(SHJ)太阳电池中, 研究了硅烷浓度和薄膜厚度对电池性能的影响. 实验发现: 随着硅烷浓度的降低, 本征硅薄膜的晶化率、氢含量、结构因子、光学带隙和光敏性等都在过渡区急剧变化; 本征硅薄膜的钝化性能由薄膜的氢含量及氢的成键方式决定. 靠近过渡区的薄膜具有较好的致密性和光敏性, 氢含量最高, 带隙态密度低, 且主要以SiH 形式成键, 对硅片表现出优异的钝化性能, 使电池的开路电压大幅提高. 但是, 当薄膜的厚度过小时, 会严重影响其钝化质量. 本实验中, 沉积本征硅薄膜的最优硅烷浓度为6% (摩尔分数), 且当薄膜厚度为~8 nm时, 所制备电池的性能最好. 实验最终获得了开路电压为672 mV, 短路电流密度为35.1 mA·cm-2, 填充因子为0.73, 效率为17.3%的nc-Si:H/c-Si SHJ太阳电池

关键词: 本征硅薄膜, 射频等离子体增强化学气相沉积, 界面钝化, 少子寿命, 硅异质结太阳电池

Abstract:

A series of intrinsic silicon thin films were prepared using radio- frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at low temperature and low power density. We investigated the influence of silane concentration (CS) on the structural, optical, and electronic properties, and passivation quality of the intrinsic silicon films, and the performances of hydrogenated nanocrystalline silicon/crystalline silicon (nc-Si:H/ c-Si) silicon heterojunction (SHJ) solar cells. The results show that with decreasing silane concentration, substantial changes in the crystalline volume fraction, hydrogen concentration, structure factor, optical bandgap, and photosensitivity of the film take place in the transition zone. The passivation quality of intrinsic silicon thin films is decided by the hydrogen content and bonding structure of the film. Films close to the transition zone show good compactness and photosensitivities, high hydrogen content, and low state densities, and contain abundant SiH bonds. The films provide excellent passivation for c-Si surfaces and significantly enhance the open-circuit voltages of nc-Si:H/c-Si SHJ solar cells. However, the passivation quality deteriorates seriously when the film is too thin. In this work, the optimum silane concentration was found to be 6% (molar fraction). By optimizing the film thickness of the passivation layers with CS=6%, we obtained an nc-Si:H/c-Si SHJ solar cell with an open-circuit voltage of 672 mV, short-circuit current density of 35.1 mA·cm-2, fill factor of 0.73, and efficiency of 17.3%.

Key words: Intrinsic silicon thin film, Radio-frequency plasma enhanced chemical vapor deposition, Interface passivation, Minority carrier lifetime, Silicon heterojunction solar cell

MSC2000: 

  • O649