物理化学学报 >> 2015, Vol. 31 >> Issue (7): 1338-1344.doi: 10.3866/PKU.WHXB201504301

电化学和新能源 上一篇    下一篇

一种在室温合成具有宽带隙CdS的简单方法

李辉1, 刘向鑫1, 张玉峰1, 杜忠明1, 杨彪1, 韩俊峰2,3, BESLAND Marie-Paule3   

  1. 1 中国科学院电工研究所太阳能热利用及光伏系统重点实验室, 北京100190;
    2 北京理工大学物理学院, 北京100081;
    3 Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
  • 收稿日期:2014-12-10 修回日期:2015-04-30 发布日期:2015-07-08
  • 通讯作者: 刘向鑫 E-mail:shinelu@mail.iee.ac.cn
  • 基金资助:

    国家自然科学基金(51472239, 61274060), 中国科学院青年促进会基金(Y410421C41), 中国科学院百人计划(Y010411C41)和中国科学院百人择优支持项目(Y210431C41)资助

Synthesis of CdS with Large Band Gap Values by a Simple Route at Room Temperature

LI Hui1, LIU Xiang-Xin1, ZHANG Yu-Feng1, DU Zhong-Ming1, YANG Biao1, HAN Jun-Feng2,3, BESLAND Marie-Paule3   

  1. 1 The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China;
    2 School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China;
    3 Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
  • Received:2014-12-10 Revised:2015-04-30 Published:2015-07-08
  • Contact: LIU Xiang-Xin E-mail:shinelu@mail.iee.ac.cn
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (51472239, 61274060), Youth Innovation Promotion Association, Chinese Academy of Sciences (Y410421C41), 100 Talents Program of IEE Chinese Academy of Sciences (Y010411C41), and 100 Talents Preferred Support Plan of the Chinese Academy of Sciences (Y210431C41).

摘要:

采用简单的磁控溅射方法, 在室温合成了CdS多晶薄膜. 在溅射CdS多晶薄膜过程中, 分别在Ar 气中通入0%、0.88%、1.78%、2.58%和3.40% (体积分数, φ)的O2, 得到不同O含量的CdS多晶薄膜. 通过X射线衍射仪、拉曼光谱仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见光谱仪对得到的CdS多晶薄膜进行表征.分析结果表明: O的掺入能得到结合更加致密, 晶粒尺寸更小的CdS多晶薄膜; 与溅射气体中没有O2时制备的CdS多晶薄膜的光学带隙(2.48 eV)相比, 当溅射气体中O2的含量为0.88%和1.78% (φ)时, 制备得到的CdS多晶薄膜具有更大的光学带隙, 分别为2.60和2.65 eV; 而当溅射气体中O2的含量为2.58%和3.40% (φ)时, 得到的CdS光学带隙分别为2.50 和2.49 eV, 与没有掺杂O的CdS的光学带隙(2.48 eV)相当; 当溅射气体中O2的含量为0.88% (φ)时, 制备的CdS多晶薄膜具有最好的结晶质量. 通过磁控溅射方法, 在溅射气体中O2含量为0.88% (φ)条件下制备的CdS多晶薄膜表面沉积了CdTe 多晶薄膜并在CdCl2气氛中进行了高温退火处理, 对退火前后的CdTe多晶薄膜进行了表征. 表征结果显示: CdS中掺入O能得到结合更紧密、退火后晶粒尺寸更大的CdTe多晶薄膜. 通过磁控溅射方法, 在CdS制备过程中于Ar 中掺入O2, 在室温就能得到具有更大光学带隙的CdS多晶薄膜, 该方法是一种简单和有效的方法, 非常适用于大规模工业化生产.

关键词: CdS, O掺杂, 磁控溅射, CdTe, 太阳能电池

Abstract:

We report the synthesis of CdS polycrystalline thin films deposited with 0%, 0.88%, 1.78%, 2.58%, and 3.40% (volume fraction, φ) O2 in sputtering Ar gas using a radio frequency magnetron sputtering method. The obtained CdS samples were characterized by X-ray diffraction, scanning electron microscope, Raman spectroscopy, ultraviolet-visible (UV-Vis) absorption spectroscopy, and X-ray photoelectron spectroscopy. O incorporation led to the formation of compact and small CdS grains. The band gap values of the CdS thin films deposited with 0.88%and 1.78% O2 were 2.60 and 2.65 eV, respectively, and were larger than that of CdS (2.48 eV) deposited without O2 gas in sputtering Ar gas. In contrast, the band gap values of the CdS thin films deposited with 2.58% and 3.40% O2 (2.50 and 2.49 eV, respectively) were consistent with that of CdS (2.48 eV) deposited without O2 gas in sputtering Ar+O2 gas. The CdS thin film deposited with 0.88% O2 displayed the highest crystalline quality. Subsequently, CdTe thin films were deposited by radio frequency magnetron sputtering method on the surface of the CdS thin films. The CdTe thin films were characterized before and after high-temperature anneal treatment in a CdCl2 atmosphere. The results showed that O incorporation into CdS led to the formation of considerably more closely packed and larger CdTe grains. The synthesis of CdS with large band gap values at room temperature is facile and effective using the current method. Therefore, the method presented herein is very promising for large-scale industrial production.

Key words: CdS, O incorporation, Magnetron sputtering, CdTe, Solar cell

MSC2000: 

  • O649