单晶硅片负极界面形貌的原位AFM探测

doi:10.3866/PKU.WHXB201511132

物理化学学报 >> 2016, Vol. 32 >> Issue (1): 283-289.doi: 10.3866/PKU.WHXB201511132

单晶硅片负极界面形貌的原位AFM探测

刘兴蕊,严会娟,王栋*(),万立骏

中国科学院化学研究所，分子纳米结构与纳米技术实验室，北京分子科学国家实验室，北京 100190

收稿日期:2015-10-02 发布日期:2016-01-13
通讯作者: 王栋 E-mail:wangd@iccas.ac.cn
基金资助:
科技部(2011YQ03012415, 2011CB932302);国家自然科学基金(21127901, 21573252)

In situ AFM Investigation of Interfacial Morphology of Single Crystal Silicon Wafer Anode

Xing-Rui LIU,Hui-Juan YAN,Dong WANG*(),Li-Jun WAN

CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China

Received:2015-10-02 Published:2016-01-13
Contact: Dong WANG E-mail:wangd@iccas.ac.cn
Supported by:
the Ministry of Science and Technology(2011YQ03012415, 2011CB932302);National Natural Science Foundation of China(21127901, 21573252)

摘要/Abstract

摘要：

利用原子力显微镜原位研究单晶硅片负极在首次充放电循环中的界面形貌变化。硅负极表面固体电解质界面(SEI)膜的形成过程为：初始SEI膜从1.5 V开始形成，在1.25–1.0 V之间生长快速，0.6 V左右生长缓慢。初始SEI膜具有层状结构的特征，表层薄膜较软，下层呈颗粒状，机械稳定性较好。在锂化电位下，硅负极表面的单晶结构逐渐变得颗粒化，发生不可逆的结构变化。经过首个充放电循环后，硅负极表面被厚度不均一的SEI膜所覆盖，SEI膜的厚度大约为10–40 nm。

关键词: 硅负极, 固体电解质界面膜, 原位原子力显微镜

Abstract:

The interfacial morphology of a single crystal Si wafer anode during the first discharging-charging cycle was investigated using in situ atomic force microscopy (AFM). The solid-electrolyte interphase (SEI) began to grow from 1.5 V, developing rapidly between 1.25 and 1.0 V, and slowed down after 0.6 V. The morphology suggested that the SEI had a layered structure. The outer layer of SEI was soft and easy to be scraped off during the AFM tip scanning. The underlayer of SEI had granular features. During the lithiation process, the Si surface became grainy because of the insertion of Li ions. After the first cycle, the Si surface was completely covered by inhomogeneous SEI. The thickness of the SEI was approximately 10–40 nm.

Key words: Si anode, Solid electrolyte interphase, In situ atomic force microscopy

MSC2000:

O646

刘兴蕊,严会娟,王栋,万立骏. 单晶硅片负极界面形貌的原位AFM探测[J]. 物理化学学报, 2016, 32(1): 283-289.

Xing-Rui LIU,Hui-Juan YAN,Dong WANG,Li-Jun WAN. In situ AFM Investigation of Interfacial Morphology of Single Crystal Silicon Wafer Anode[J]. Acta Phys. -Chim. Sin., 2016, 32(1): 283-289.

参考文献

1	Palacin M. R. Chem. Soc. Rev 2009, 38, 2565.
2	Beattie S. D. ; Larcher D. ; Morcrette M. ; Simon B. ; Tarascon J. M. J. Electrochem. Soc 2008, 155, A158.
3	Wu H. ; Cui Y. Nano Today 2012, 7, 414.
4	Kong F. ; Kostecki R. ; Nadeau G. ; Song X. ; Zaghib K. ; Kinoshita K. ; McLarnon F. J. Power Sources 2001, 97, 58.
5	Wu H. ; Zheng G. ; Liu N. ; Carney T. J. ; Yang Y. ; Cui Y. Nano Lett 2012, 12, 904.
6	Szczech J. R. ; Jin S. Energy Environ. Sci 2011, 4, 56.
7	Liu X. H. ; Zhong L. ; Huang S. ; Mao S. X. ; Zhu T. ; Huang J. Y. ACS Nano 2012, 6 (1522)
8	McDowell M. T. ; Lee S. W. ; Harris J. T. ; Korgel B. A. ; Wang C. ; Nix W. D. ; Cui Y. Nano Lett 2013, 13, 758.
9	Chen, D.; Mei, X.; Ji, G.; Lu, M.; Xie, J.; Lu, J.; Lee, J. Y. Angew. Chem. Int. Edit. 2012, 51, 2409. doi: 10.1002/anie.201107885.
10	Zhou X. ; Yin Y. X. ; Wan L. J. ; Guo Y. G. Chem. Commun 2012, 48, 2198.
11	Li X. ; Meduri P. ; Chen X. ; Qi W. ; Engelhard M. H. ; Xu W. ; Ding F. ; Xiao J. ; Wang W. ; Wang C. J. Mater. Chem 2012, 22, 11014.
12	Liu N. ; Wu H. ; McDowell M. T. ; Yao Y. ; Wang C. ; Cui Y. Nano Lett 2012, 12, 3315.
13	Xu K. Chem. Rev 2014, 114, 11503.
14	Nie M. ; Chalasani D. ; Abraham D. P. ; Chen Y. ; Bose A. ; Lucht B. L. J. Phys. Chem. C 2013, 117, 1257.
15	Philippe B. ; Dedryvère R. ; Gorgoi M. ; Rensmo H. ; Gonbeau D. ; Edström K. Chem. Mater 2013, 25, 394.
16	Arreaga-Salas D. E. ; Sra A. K. ; Roodenko K. ; Chabal Y. J. ; Hinkle C. L. J. Phys. Chem. C 2012, 116, 9072.
17	Sacci R. L. ; Dudney N. J. ; More K. L. ; Parent L. R. ; Arslan I. ; Browning N. D. ; Unocic R. R. Chem. Commun 2014, 50, 2104.
18	Baddour-Hadjean R. ; Pereira-Ramos J. P. Chem. Rev 2009, 110, 1278.
19	Li J. T. ; Zhou Z. Y. ; Broadwell I. ; Sun S. G. Accounts Chem. Res 2012, 45, 485.
20	Rhodes K. ; Kirkham M. ; Meisner R. ; Parish C. M. ; Dudney N. ; Daniel C. Rev. Sci. Instrum 2011, 82, 075107.
21	Sugimoto Y. ; Pou P. ; Abe M. ; Jelinek P. ; Pérez R. ; Morita S. Custance, Ó. Nature 2007, 446, 64.
22	Morita S. J. Electron Microsc 2011, 60, S199.
23	Jeong S. K. ; Inaba M. ; Abe T. ; Ogumi Z. J. Electrochem. Soc 2001, 148, A989.
24	Deng X. ; Liu X. ; Yan H. ; Wang D. ; Wan L. Sci. China Chem 2013, 57, 178.
25	Liu X. R. ; Wang L. ; Wan L. J. ; Wang D. ACS Appl. Mater. Interfaces 2015, 7, 9573.
26	Demirocak D. E. ; Bhushan B. J. Colloid Interface Sci 2014, 423, 151.
27	Liu X. R. ; Wang D. ; Wan L. J. Sci. Bull 2015, 60, 839.
28	Domi Y. ; Ochida M. ; Tsubouchi S. ; Nakagawa H. ; Yamanaka T. ; Doi T. ; Abe T. ; Ogumi Z. J. Phys. Chem. C 2011, 115, 25484.
29	Liu R. R. ; Deng X. ; Liu X. R. ; Yan H. J. ; Cao A. M. ; Wang D. Chem. Commun 2014, 50, 15756.
30	Beaulieu L. Y. ; Hatchard T. D. ; Bonakdarpour A. ; Fleischauer M. D. ; Dahn J. R. J. Electrochem. Soc 2003, 150, A1457.
31	Martin L. ; Martinez H. ; Ulldemolins M. ; Pecquenard B. ; Le Cras F. Solid State Ionics 2012, 215, 36.
32	He, Y.; Yu, X.; Li, G.; Wang, R.; Li, H.; Wang, Y.; Gao, H.; Huang, X. J. Power Sources 2012, 216, 131. doi: 10.1016/j.jpowsour.2012.04.105.
33	Becker C. R. ; Strawhecker K. E. ; McAllister Q. P. ; Lundgren C. A. ACS Nano 2013, 7, 9173.
34	McAllister Q. P. ; Strawhecker K. E. ; Becker C. R. ; Lundgren C. A. J. Power Sources 2014, 257, 380.
35	Liu X. R. ; Deng X. ; Liu R. R. ; Yan H. J. ; Guo Y. G. ; Wang D. ; Wan L. J. ACS Appl. Mater. Interfaces 2014, 6, 20317.
36	Zheng J. ; Zheng H. ; Wang R. ; Ben L. ; Lu W. ; Chen L. ; Li H. Phys. Chem. Chem. Phys 2014, 16, 13229.
37	Tokranov A. ; Sheldon B. W. ; Li C. ; Minne S. ; Xiao X. ACS Appl. Mater. Interfaces 2014, 6, 6672.
38	Gosalvez, M.; Nieminen, R. New J. Phys. 2003, 5, 100. doi: http://dx.doi.org/10.1088/1367-2630/5/1/400.
39	Sato K. ; Shikida M. ; Yamashiro T. ; Tsunekawa M. ; Ito S.. Sens. Actuators A 1999, 73, 122.
40	Guzman H. V. ; Perrino A. P. ; Garcia R. ACS Nano 2013, 7, 3198.
41	Alsteens D. ; Dupres V. ; Yunus S. ; Latgé J. P. ; Heinisch J. J. J. ; Dufréne Y. F. Langmuir 2012, 28, 16738.
42	Wind R. A. ; Jones H. ; Little M. J. ; Hines M. A. J. Phys. Chem. B 2002, 106, 1557.
43	Philipsen H. G. ; Kelly J. J. J. Phys. Chem. B 2005, 109, 17245.
44	Cresce A. V. ; Russell S. M. ; Baker D. R. ; Gaskell K. J. ; Xu K. Nano Lett 2014, 14, 1405.
45	Leroy S. ; Martinez H. ; Dedryvere R. ; Lemordant D. ; Gonbeau D. Appl. Surf. Sci 2007, 253, 4895.

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单晶硅片负极界面形貌的原位AFM探测

In situ AFM Investigation of Interfacial Morphology of Single Crystal Silicon Wafer Anode

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