物理化学学报 >> 2016, Vol. 32 >> Issue (4): 1029-1035.doi: 10.3866/PKU.WHXB201601292

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碳纳米管薄膜晶体管中的接触电阻效应

夏继业1,董国栋1,田博元1,严秋平1,韩杰2,邱松2,李清文2,梁学磊1,*(),彭练矛1   

  1. 1 北京大学信息科学技术学院, 纳米器件与物理化学教育部重点实验室, 北京 100871
    2 中国科学院苏州纳米技术与纳米仿生研究所, 江苏苏州 215123
  • 收稿日期:2015-12-11 发布日期:2016-04-07
  • 通讯作者: 梁学磊 E-mail:liangxl@pku.edu.cn
  • 基金资助:
    国家自然科学基金(61321001);北京市科学技术委员会(Z141100003814006);教育部(113003A)

Contact Resistance Effects in Carbon Nanotube Thin Film Transistors

Ji-Ye XIA1,Guo-Dong DONG1,Bo-Yuan TIAN1,Qiu-Ping YAN1,Jie HAN2,Song QIU2,Qing-Wen LI2,Xue-Lei LIANG1,*(),Lian-Mao PENG1   

  1. 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China
    2 Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, P. R. China
  • Received:2015-12-11 Published:2016-04-07
  • Contact: Xue-Lei LIANG E-mail:liangxl@pku.edu.cn
  • Supported by:
    the Research Project of Chinese National Natural Science Foundation of China(61321001);Beijing Municipal Science & Technology Commission, China(Z141100003814006);Research Project of the Ministry of Education of China(113003A)

摘要:

利用不同功函数的金属作为接触电极,研究了网络状碳纳米管薄膜晶体管(CNT-TFT)的接触电阻效应。研究表明金属Pd与碳纳米管薄膜形成良好的欧姆接触, Au则形成近欧姆接触,这两种接触的器件的开态电流和迁移率较高。Ti和Al都与碳纳米管薄膜形成肖特基接触,且Al接触比Ti接触的势垒更高,接触电阻也更大,相应器件的开态电流和迁移率都较低。该结果表明对于CNT-TFT仍然可以通过接触来调控器件的性能,这对CNT-TFT的实用化进程具有重要的促进作用。

关键词: 碳纳米管, 薄膜晶体管, 接触电阻, 欧姆接触, 肖特基势垒

Abstract:

The contact resistance effect in the network type carbon nanotube thin film transistors (CNT-TFTs) is studied by using different contact metals. It is shown that palladium (Pd) can form an ohmic type contact with the carbon nanotube thin film, and gold (Au) forms an almost ohmic contact. On-state current and carrier mobility in the devices of these two contacts are high. In contrast, both titanium (Ti) and aluminum (Al) form Schottkytype contacts with the carbon nanotube thin film. The barrier height and the contact resistance of the Al contact are higher than those of the Ti contact. Therefore, the on-state current and carrier mobility are relatively low in the corresponding devices of these two types of contacts. These results indicate that the performance of CNTTFTs can be tuned by the contact metal, which is important for the commercialization of CNT-TFTs.

Key words: Carbon nanotube, Thin film transistor, Contact resistance, Ohmic contact, Schottky barrier

MSC2000: 

  • O649