物理化学学报 >> 2016, Vol. 32 >> Issue (4): 1019-1028.doi: 10.3866/PKU.WHXB201602183

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基于宏观金属辅助化学刻蚀制备硅纳米线的研究

刘琳1,2,*(),李志胜1,胡慧东1,宋维力3   

  1. 1 华北电力大学可再生能源学院, 新能源电力系统国家重点实验室, 北京 102206
    2 北京师范大学, 能量转换与存储材料北京市重点实验室, 北京 100875
    3 北京科技大学新材料技术研究院, 北京 100083
  • 收稿日期:2015-12-30 发布日期:2016-04-07
  • 通讯作者: 刘琳 E-mail:liulin2014@ncepu.edu.cn
  • 基金资助:
    中国博士后科学基金面上项目(2014M560934);中央高校基本科研业务费项目(2015QN16)

Insight into Macroscopic Metal-Assisted Chemical Etching for Silicon Nanowires

Lin LIU1,2,*(),Zhi-Sheng LI1,Hui-Dong HU1,Wei-Li SONG3   

  1. 1 State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University, Beijing 102206, P. R. China
    2 Beijing Key Laboratory of Energy Conversion and Storage Materials, Beijing Normal University, Beijing 100875, P. R. China
    3 Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
  • Received:2015-12-30 Published:2016-04-07
  • Contact: Lin LIU E-mail:liulin2014@ncepu.edu.cn
  • Supported by:
    the China Postdoctoral Science Foundation(2014M560934);Fundamental Research Funds for the Central Universities, China(2015QN16)

摘要:

分别利用镀银的硅衬底和铂丝电极作为原电池反应中的阴极和阳极,基于金属辅助化学刻蚀采用宏观原电池的方法制备硅纳米线,深入研究了该法制备硅纳米线阵列的机理。通过改变电连接、镀银、刻蚀参数、硅衬底和光照等实验条件,系统地研究了所得硅纳米线形貌与其对应短路电流的关系,实验发现短路电流与硅纳米线长度有一定的对应关系。文章中所提出的模型旨在从根本上解决金属辅助化学刻蚀制备硅纳米线的机理。最后对这种方法所具有的潜在应用价值进行了展望和讨论。

关键词: 半导体, 微结构, 电化学, 硅纳米线, 金属刻蚀

Abstract:

To understand the principles of the fabrication of nanowire arrays using macroscopic metal-assisted chemical etching (MACE), Si nanowires (SiNWs) are synthesized using Ag-coated Si substrates and Pt electrodes by the macroscopic MACE. Analysis of the SiNWmorphology coupled with the corresponding current density in the MACE process is applied to systematically investigate the effects of the electrical connection, Ag coating, etching conditions, Si substrates, and light irradiation on the formation of SiNWs. It is found that there is a certain relationship between the current density and the SiNWlength. Amode is proposed to fundamentally understand the mechanisms of the preparation of SiNWs using MACE. Associated opportunities are also discussed.

Key words: Semiconductor, Microstructure, Electrochemistry, Silicon nanowire, Metal etching

MSC2000: 

  • O649