物理化学学报 >> 2016, Vol. 32 >> Issue (9): 2364-2368.doi: 10.3866/PKU.WHXB201605182

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硅(111)衬底上直接接枝巯基的方法

张小宁*(),HOLLIMON Valerie,BRODUS DaShan   

  • 收稿日期:2016-04-18 发布日期:2016-09-08
  • 通讯作者: 张小宁 E-mail:XZhang@paine.edu
  • 基金资助:
    美国国家自然科学基金(HRD-1505197)

A Method for Attaching Thiol Groups Directly on a Silicon (111) Substrate

Xiao-Ning ZHANG*(),Valerie HOLLIMON,DaShan BRODUS   

  • Received:2016-04-18 Published:2016-09-08
  • Contact: Xiao-Ning ZHANG E-mail:XZhang@paine.edu
  • Supported by:
    the National Science Foundation, USA(HRD-1505197)

摘要:

硅衬底是很有应用前景的表面。这是因为硅衬底在机械上和化学上的适应性能够抵御水环境和有机环境带来的影响。除此之外,优良的电学性质也是它们成为具有应用前景的表面的原因。目前有许多方法来进行硅表面的巯基化,很多情况下是将具有―SH末端的分子接枝到硅衬底上。但这些方法存在反应时间长的问题。在这篇报导中,我们发展了一种新的硅表面巯基化方法。这种方法可以实现将巯基直接接枝到硅片表面。新方法需要对硅衬底进行氯化和巯基化反应,所需的反应时间缩短。X射线光电子能谱(XPS)和接触角测量被用于研究反应中每个步骤的表面表征。

关键词: 硅(111)衬底, 表面巯基化, X射线光电子能谱, 接触角测量

Abstract:

Silicon surfaces are promising interfaces because they are mechanically and chemically resilient, able to resist wear in aqueous and organic environments, and display good electrical properties. There are a number of methods that are used to thiolate a silicon surface, notably through the attachment of molecules that contain terminal ―SH moieties. These methods usually suffer from long reaction times. In the present work, we developed an alternative method for thiolation of a silicon surface by introducing terminal thiol groups directly onto the silicon surface. The developed wet chemical process relies on chlorination and then surface thiolation and requires less time for grafting thiol groups on the silicon substrate. X-ray photoelectron spectroscopy (XPS) and contact angle measurement were employed for surface characterization after each step.

Key words: Silicon (111) substrate, Surface thiolation, X-ray photoelectron spectroscopy, Contact angle measurement

MSC2000: 

  • O647