物理化学学报 >> 2017, Vol. 33 >> Issue (1): 249-254.doi: 10.3866/PKU.WHXB201610142

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基于CH3NH3PbI3单晶的Ta2O5顶栅双极性场效应晶体管

吕乾睿,李晶,廉志鹏,赵昊岩,董桂芳*(),李强,王立铎,严清峰*()   

  • 收稿日期:2016-08-22 发布日期:2016-12-29
  • 通讯作者: 董桂芳,严清峰 E-mail:donggf@mail.tsinghua.edu.cn;yanqf@mail.tsinghua.edu.cn
  • 基金资助:
    国家自然科学基金(51173097);国家自然科学基金(91333109);国家重点基础研究发展规划项目(2013CB632900);清华大学自主科研项目(20131089202);清华大学自主科研项目(20161080165);低维量子物理国家重点实验室开放基金(KF201516)

CH3NH3PbI3 Single Crystal-Based Ambipolar Field-Effect Transistor with Ta2O5 as the Top Gate Dielectric

Qian-Rui LÜ,Jing LI,Zhi-Peng LIAN,Hao-Yan ZHAO,Gui-Fang DONG*(),Qiang LI,Li-Duo WANG,Qing-Feng YAN*()   

  • Received:2016-08-22 Published:2016-12-29
  • Contact: Gui-Fang DONG,Qing-Feng YAN E-mail:donggf@mail.tsinghua.edu.cn;yanqf@mail.tsinghua.edu.cn
  • Supported by:
    National Natural Science Foundation of China(51173097);National Natural Science Foundation of China(91333109);National Key Basic Research Program of China(2013CB632900);Tsinghua University Initiative Scientific Research Program, China(20131089202);Tsinghua University Initiative Scientific Research Program, China(20161080165);Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China(KF201516)

摘要:

具有无机-有机杂化钙钛矿结构的CH3NH3PbI3通常偏向于显示n型半导体特性,本文以五氧化二钽(Ta2O5)作为绝缘层,制备了基于钙钛矿CH3NH3PbI3单晶的顶栅结构场效应晶体管,暗态下更明显地观察到了CH3NH3PbI3所具有的p型场效应特性,空穴场效应迁移率达到8.7×10-5 cm2·V-1·s-1,此暗态空穴迁移率比原有报道的基于CH3NH3PbI3多晶薄膜的SiO2底栅场效应晶体管提高了一个数量级。此外,光照对CH3NH3PbI3单晶场效应晶体管的性能有强烈影响。与底栅结构CH3NH3PbI3多晶场效应晶体管不同,即使有栅极和绝缘层的遮挡,5.00 mW·cm-2的光照仍可使CH3NH3PbI3单晶场效应晶体管的空穴电流提高一个数量级(VGS(栅源电压)=VDS(漏源电压)=20 V),光响应度达到2.5 A·W-1。本文工作实现了对CH3NH3PbI3场效应晶体管载流子传输的选择性调控,表明在没有外部因素的参与下,通过合适的器件设计,CH3NH3PbI3同样具有制备成双极性晶体管的潜力。

关键词: 钙钛矿, 五氧化二钽, 场效应, 迁移率, 光照

Abstract:

Organic-inorganic hybrid perovskite methylammonium lead iodide (CH3NH3PbI3) generally tends to show n-type semiconductor properties. In this work, a field-effect transistor (FET) device based on a CH3NH3PbI3 single crystal with tantalum pentoxide (Ta2O5) as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer characteristics in the dark was 8.7×10-5 cm2·V-1·s-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO2 as the bottom gate dielectric. In addition, the effect of light illumination on the CH3NH3PbI3 single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH3NH3PbI3 single crystal. Different from a CH3NH3PbI3 polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm-2 caused the hole current to increase by one order of magnitude compared with that in the dark (VGS (gate-source voltage)=VDS (drain-source voltage)=20 V) and the photoresponsivity reached 2.5 A·W-1. The introduction of Ta2O5 as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that in the absence of external factors, by appropriate device design, CH3NH3PbI3 also has potential for use in ambipolar transistors.

Key words: Perovskite, Tantalum pentoxide, Field-effect, Mobility, Light illumination

MSC2000: 

  • O649