物理化学学报 >> 2022, Vol. 38 >> Issue (3): 1907076.doi: 10.3866/PKU.WHXB201907076

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新型Ti3C2 MXene的化学制备及基于MXene忆阻器特性与机理

王钰琪1, 张缪城1, 徐威1, 沈心怡1, 高斐1, 朱家乐1, 万相1, 连晓娟1, 许剑光2,*(), 童祎1,3,*()   

  1. 1 南京邮电大学电子与光学工程学院,南京 210023
    2 盐城工学院材料科学与工程学院,江苏盐城 224051
    3 新加坡科技设计大学,工程产品开发系,新加坡 487372
  • 收稿日期:2019-07-25 录用日期:2019-09-09 发布日期:2019-09-17
  • 通讯作者: 许剑光,童祎 E-mail:jgxu@163.com;tongyi@njupt.edu.cn
  • 基金资助:
    国家自然科学基金(61704088);国家自然科学基金(61874059);国家自然科学基金(21671167);中国博士后科学基金(2018M642290);江苏省研究生创新计划(SJCX19_0256);江苏省重点人才工程(SZDG2018007);江苏省重点人才工程(TJ218001)

Chemical Preparation of New Ti3C2 MXene and the Performance and Mechanism of Memristor Based on MXene

Yuqi Wang1, Miaocheng Zhang1, Wei Xu1, Xinyi Shen1, Fei Gao1, Jiale Zhu1, Xiang Wan1, Xiaojuan Lian1, Jianguang Xu2,*(), Yi Tong1,3,*()   

  1. 1 College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
    2 School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng 224051, Jiangsu Province, China
    3 Engineering Product Development, Singapore University of Technology and Design, Singapore 487372
  • Received:2019-07-25 Accepted:2019-09-09 Published:2019-09-17
  • Contact: Jianguang Xu,Yi Tong E-mail:jgxu@163.com;tongyi@njupt.edu.cn
  • About author:Email: tongyi@njupt.edu.cn, Tel.: +86-139-51009852, (Y.T.)
    Email: jgxu@163.com (J.X.)
  • Supported by:
    the National Natural Science Foundation of China(61704088);the National Natural Science Foundation of China(61874059);the National Natural Science Foundation of China(21671167);the China Postdoctoral Science Foundation(2018M642290);the Graduate Research and Innovation Projects of Jiangsu Province, China(SJCX19_0256);the Jiangsu Provincial Key Talent Project, China(SZDG2018007);the Jiangsu Provincial Key Talent Project, China(TJ218001)

摘要:

阻变器件是一种微电子器件,具有阻值可在两个甚至两个以上的阻态之间重复变化的特点。忆阻器作为新型的阻变器件,具有可连续变化的丰富阻态。近年来因其具备简单的二端结构、高集成度以及低工作电压等特性,在新型非易失性存储以及构建神经形态系统等方面被广泛研究。但其在实现应用的过程中仍存在着稳定性较差等问题。近期一些工作证明了二维材料如氧化石墨烯在优化忆阻器性能方面具备良好的应用潜力。MXene是一种具备类似石墨烯结构的新型二维过渡金属碳/氮化物,因其具备二维层状结构显现出特殊的力学以及电学特性,有望应用于忆阻器中以提高器件的电学性能。在本文中,我们通过化学湿法刻蚀制备了Ti3C2粉末,通过旋涂工艺在忆阻器结构中引入Ti3C2薄膜。Ti3C2 MXene与SiO2同时作为忆阻器阻变层,制备了Cu/Ti3C2/SiO2/W结构的忆阻器,并且对其相关电学特性进行了探究。在该器件上,通过实验测得忆阻器典型的开关特性曲线并在双向直流电压下针对高、低阻态的可重复性、稳定性进行了实验。结果表明该器件能够在100个扫描循环过程中保持稳定的高、低阻态达到104 s以上。同时,该器件状态能够受脉冲电压调节,实现突触间典型的双脉冲易化行为。实验结果表明基于Ti3C2 MXene的忆阻器将有望应用于构建新兴存储设备以及人工神经形态系统。

关键词: 阻变器件, 忆阻器, 湿法刻蚀, MXene, 导电特性, 导电机理

Abstract:

Resistive switching devices have the advantage that the resistance can be repeatedly regulated between two or more resistance states. As a new resistive switching device, a memristor has abundant resistance states that can be continuously tuned. In recent years, memristors have been extensively studied for emerging nonvolatile memories and in the construction of neuromorphic systems owing to their simple two-terminal structure, high integration, and low operating voltage compared with those of traditional metal-oxide-semiconductor field-effect transistors. However, their application is limited owing to their relatively poor reliability. Recently, several studies have shown that two-dimensional materials such as graphene oxide can optimize the memristor performance. A new two-dimensional material, MXene, also exhibits special mechanical and electrical properties that show promise for use in memristors owing to its two-dimensional layered structure similar to that of graphene. MXene is a two-dimensional transition metal carbide/nitride of the form Mn+1Xn, where M is an early transition metal and X is carbon or nitrogen. Its other characteristics such as hydrophilic surfaces and ultrahigh metal conductivity (6000–8000 S·cm-1) have been studied, and it has been applied to energy storage devices and electronic devices such as supercapacitors and secondary batteries. However, the application of MXene in resistive devices has been rarely investigated, especially for memristors. In this study, we prepared Ti3C2 powder by etching layered compounds of Ti3AlC2 with a mixture of HCl and HF. Next, Ti3C2 film was introduced into the memristor structure by spin-coating. The physical characteristics of Ti3C2 were investigated and analyzed by X-ray diffraction and scanning electron microscopy, and a memristor with Cu/Ti3C2/SiO2/W structure was fabricated. In this structure, Ti3C2 and SiO2 were introduced as resistive layers, and related electrical properties were investigated. Under dual DC voltage sweeping, the typical switching characteristic curves of the memristor were measured. Moreover, the repeatability and stability of high- and low-resistance states were investigated and analyzed, respectively. The experimental results show that the device can maintain stable high- and low-resistance states for > 104 s during 100 dual-voltage sweeping cycles. In addition, the device can be regulated by a pulse voltage and realize typical paired-pulse facilitation that is similar to biological synapses. This work proved that the Cu/Ti3C2/SiO2/W memristor has huge potential for application in the construction of emerging memory devices and artificial neuromorphic systems.

Key words: Resistive switching device, Memristor, Wet etching, MXene, Conductive performance, Conductive mechanism

MSC2000: 

  • O649