物理化学学报 >> 2022, Vol. 38 >> Issue (5): 2008037.doi: 10.3866/PKU.WHXB202008037

论文 上一篇    

一维碳纳米管/二维二硫化钼混合维度异质结的原位制备及其电荷转移性能

邹菁云1, 高冰2, 张小品2, 唐磊1, 冯思敏1, 金赫华2, 刘碧录1,*(), 成会明1,3,*()   

  1. 1 清华大学,清华伯克利-深圳学院 & 清华大学深圳国际研究生院,深圳盖姆石墨烯中心,广东 深圳 518055
    2 中国科学院苏州纳米技术与纳米仿生研究所,纳米器件与应用重点实验室,江苏 苏州 215123
    3 中国科学院金属研究所,沈阳材料科学国家(联合)实验室,沈阳 110016
  • 收稿日期:2020-08-13 录用日期:2020-09-08 发布日期:2020-09-14
  • 通讯作者: 刘碧录,成会明 E-mail:bilu.liu@sz.tsinghua.edu.cn;hmcheng@sz.tsinghua.edu.cn
  • 基金资助:
    国家自然科学基金(51991340, 51991343, 51722206)及深圳市工业和信息化局石墨烯制造业创新中心(201901171523)资助项目

Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property

Jingyun Zou1, Bing Gao2, Xiaopin Zhang2, Lei Tang1, Simin Feng1, Hehua Jin2, Bilu Liu1,*(), Hui-Ming Cheng1,3,*()   

  1. 1 Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, Guangdong Province, China
    2 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, Suzhou 215123, Jiangsu Province, China
    3 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
  • Received:2020-08-13 Accepted:2020-09-08 Published:2020-09-14
  • Contact: Bilu Liu,Hui-Ming Cheng E-mail:bilu.liu@sz.tsinghua.edu.cn;hmcheng@sz.tsinghua.edu.cn
  • About author:Email: hmcheng@sz.tsinghua.edu.cn (H.C.)
    Email: bilu.liu@sz.tsinghua.edu.cn (B.L.)
  • Supported by:
    国家自然科学基金(51991340, 51991343, 51722206)及深圳市工业和信息化局石墨烯制造业创新中心(201901171523)资助项目

摘要:

一维(1D)材料与二维(2D)材料的结合可形成独特的混合维度异质结,其在继承2D/2D范德瓦尔斯异质结的独特物性之外,还具有丰富的堆叠构型,为进一步调控异质结的结构及性能提供了新的可操控自由度。p型1D单壁碳纳米管(SWCNT)与n型2D二硫化钼(MoS2)的结合,为调控异质结的能带结构及器件性能提供了丰富的选择。本文直接在高密度、手性窄分布的SWCNT定向阵列及无序薄膜表面原位生长MoS2,制备出高质量1D SWCNT/2D MoS2混合维度异质结。深入分析形核点的表面形貌与结构,提出了“吸附-扩散-吸附”生长机制,用于解释混合维度异质结的生长。利用拉曼光谱分析,证实SWCNT与MoS2间存在显著的电荷转移作用,载流子可在界面处快速传输,为后续基于此类1D/2D异质结的新型电子及光电器件的设计与制备提供了新思路。

关键词: 单壁碳纳米管, 二硫化钼, 维度, 异质结, 电荷转移

Abstract:

A unique mixed-dimensional van der Waals heterostructure can be formed by integrating one-dimensional (1D) and two-dimensional (2D) materials. Such a 1D/2D mixed-dimensional heterostructure will not only inherit the unique properties of 2D/2D heterostructures, but also has a variety of stacking configurations, offering a new platform to adjust its structure and properties. The combination of p-type 1D single-walled carbon nanotubes (SWCNTs) and n-type 2D molybdenum disulfide (MoS2) is one such example, possessing tunable properties. In situ chemical vapor deposition (CVD) is one of the most effective methods to construct 1D SWCNT/2D MoS2 mixed-dimensional heterostructures. There are several reports of successfully grown SWCNT/MoS2 heterostructures. The reports indicate that these heterostructures exhibit strong electrical and mechanical couplings between the SWCNTs and MoS2, making it suitable for the construction of high-performance electronic and optoelectronic devices. However, there are still several problems associated with the in situ CVD growth of SWCNT/MoS2 heterostructures. First, the growth mechanism of the 1D SWCNT/2D MoS2 heterostructure is unclear. We still do not know how the existence of small-diameter SWCNTs will affect the nucleation and growth process of MoS2. It is undetermined whether MoS2 flakes will grow above the preexisting SWCNTs or under them. Second, current studies all report the growth of MoS2 on a substrate sparsely covered by SWCNTs, which have a wide chirality distribution. Since the chirality of SWCNTs determines their physical properties and the density of SWCNTs significantly affects its performance in electronic devices, both the low density and wide chirality distribution of SWCNTs reported in these studies impose negative impacts on the interface behavior of SWCNT/MoS2 heterostructures and their performance in devices. Herein, we report the preparation of high-quality 1D SWCNT/2D MoS2 heterostructures by directly growing MoS2 on dense and narrow-chirality distributed SWCNTs on a silicon substrate. To achieve this goal, high-purity semiconducting SWCNTs with narrow chirality distributions were sorted from the raw arc-discharged SWCNTs, and then high-density SWCNT arrays or networks were formed on a silicon substrate by dip-coating. Through in-depth analyses of the surface morphology and structure of the nuclei, we found that MoS2 may prefer to grow under the SWCNTs and will grow much faster in the grooves between the SWCNTs to form a growth front. Therefore, an interesting "absorption-diffusion-absorption" growth mechanism has been proposed to explain the nucleation and growth process of SWCNT/MoS2 heterostructures. In addition, we confirm the presence of strong charge coupling in the mixed-dimensional heterostructure through Raman analysis. Carriers can be quickly transferred through the interface between the SWCNTs and MoS2, paving a way for the future design and fabrication of novel electronic and optoelectronic devices based on 1D/2D heterostructures.

Key words: Single-walled carbon nanotube, Molybdenum disulfide, Dimension, Heterostructure, Charge transfer

MSC2000: 

  • O647