物理化学学报

所属专题: 金属卤化物钙钛矿光电材料和器件

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钙钛矿同质结太阳电池研究进展

纪军, 刘新, 黄浩, 蒋皓然, 段明君, 刘本玉, 崔鹏, 李英峰, 李美成   

  1. 华北电力大学新能源学院, 新能源电力系统国家重点实验室, 北京 102206
  • 收稿日期:2020-08-31 修回日期:2020-09-25 录用日期:2020-09-25 发布日期:2020-10-16
  • 通讯作者: 李美成 E-mail:mcli@ncepu.edu.cn
  • 基金资助:
    国家自然科学基金(51772096,51972110),北京市科技计划(Z181100005118002),欧盟奖学金项目,科技北京百名领军人才培养工程,中央高校基本科研业务费专项资金(2017ZZD02,2019QN060),华北电力大学“双一流”研究生人才培养计划资助

Recent Progress on Perovskite Homojunction Solar Cells

Jun Ji, Xin Liu, Hao Huang, Haoran Jiang, Mingjun Duan, Benyu Liu, Peng Cui, Yingfeng Li, Meicheng Li   

  1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China
  • Received:2020-08-31 Revised:2020-09-25 Accepted:2020-09-25 Published:2020-10-16
  • Supported by:
    The project was supported by the National Natural Science Foundation of China (51772096, 51972110), the Beijing Science and Technology Project (Z181100005118002), the Par-Eu Scholars Program, the Science and Technology Beijing 100 Leading Talent Training Project, the Fundamental Research Funds for the Central Universities (2017ZZD02, 2019QN060) and the NCEPU "Double First-Class" Graduate Talent Cultivation Program.

摘要: 钙钛矿太阳电池制备工艺简单,效率提升迅速,被认为是最具应用潜力的新一代光伏技术之一。近年来,大量研究表明,钙钛矿光电材料可以通过自掺杂或外源掺杂的方式实现薄膜导电类型(p型或n型)的定向调控;而具有双层薄膜结构的钙钛矿p-n同质结可以通过薄膜双沉积技术制备,这为钙钛矿同质结太阳电池的设计与制备提供了技术基础。新型钙钛矿同质结太阳电池摒弃传统的电子传输层和空穴传输层,可简化电池结构,不仅有利于提升电池工作稳定性,降低成本,更能进一步释放钙钛矿太阳电池在柔性和半透明应用中的潜力,推动钙钛矿电池的实用化进程。本文围绕钙钛矿同质结太阳电池,综述了钙钛矿光电材料p/n特性掺杂和钙钛矿同质结的研究进展,讨论了钙钛矿同质结太阳电池的基本结构和工作原理,并对其当前存在的技术问题和应用前景进行了总结与展望。

关键词: 钙钛矿, p型掺杂, n型掺杂, 钙钛矿同质结, 太阳电池

Abstract: Perovskite solar cell is a star of the new generation of photovoltaic technology with the greatest application potential due to its simple preparation process and rapid efficiency improvement. At present, the mainstream perovskite solar cell adopts p-i-n structure, using carrier transport materials to extract electrons and holes respectively, so as to realize electric energy output. However, the dependence of traditional p-i-n perovskite solar cell on electron transport layer and hole transport layer makes it not a cost-effective cell, and greatly increases the risk of device stability. Therefore, the design and preparation of perovskite p-n homojunction to realize carrier separation and transmission is considered as an important direction of structural innovation. In recent years, it has been reported frequently that perovskite photoelectric materials exhibit flexible conductivity from p-type, intrinsic to n-type depending on self-doping or external impurities doping. Furthermore, the perovskite p-n homojunction has been developed by a combined deposition method, which provide the possibility for designing and preparing perovskite homojunction solar cells (PHSCs). PHSCs abandon the traditional electron transport layer and hole transport layer, simplifying the device structure. It can not only improve the working stability and reduce the production cost, but also further release the application potential of perovskite solar cells in the field of flexibility and translucency, which can promote the practical popularization of perovskite solar cells. Nevertheless, the PHSCs is still in its infancy, and there are many technical problems to be solved which restrict its efficiency and stability improvement as well as its scale and industrial production. Firstly, the doping degree of perovskite materials should be further increased for high efficiency perovskite homojunction. It means that more accurate self-doping method and exogenous doping processes for heavy doping perovskite need to be developed. Secondly, the stability of the perovskite homojunction should be enhanced to promote the practical application, which requires us to start with the three aspects of inhibiting perovskite decomposition, blocking ion migration, and developing the supporting encapsulation technology to carry out relevant research programs. Thirdly, it is an important task for the industrialization of PHSCs to realize the large-scale preparation through combined deposition method, preservation transfer of perovskite films or superficial doping technology. In this paper, the research progress of PHSCs is reviewed in terms of p-type/n-type doping process and perovskite homojunction. The basic structure, working principle and existing technical problems of PHSCs are discussed in detail. This work has wide ranging impacts beyond solar cells, including emerging applications in light emission, photoelectric detector and neuromorphic computing.

Key words: Perovskite, p-type doping, n-type doping, Perovskite homojunction, Solar cell

MSC2000: 

  • O649