物理化学学报 >> 2022, Vol. 38 >> Issue (8): 2104030.doi: 10.3866/PKU.WHXB202104030

论文 上一篇    

量子点发光二极管中电荷累积行为

王成1,2, 张弛1, 黎瑞锋3, 陈琪1,4,*(), 钱磊3, 陈立桅1,5   

  1. 1 中国科学院苏州纳米技术与纳米仿生研究所国际实验室,中国科学院纳米科学卓越中心,江苏 苏州 215123
    2 上海科技大学物质科学与技术学院,上海 201210
    3 中国科学院宁波材料技术与工程研究所,浙江 宁波 315201
    4 中国科学技术大学纳米技术与纳米仿生学院,合肥 230026
    5 上海交通大学化学与化工学院物质科学原位中心,上海 200240
  • 收稿日期:2021-04-14 录用日期:2021-05-07 发布日期:2021-05-10
  • 通讯作者: 陈琪 E-mail:qchen2011@sinano.ac.cn
  • 作者简介:Qi Chen, Email: qchen2011@sinano.ac.cn; Tel.: +86-512-62872723
  • 基金资助:
    国家重点研究发展计划(2016YFA0200700);国家自然科学基金(21625304);国家自然科学基金(21875280);国家自然科学基金(22022205);国家自然科学基金(21991150);国家自然科学基金(21991153)

Charge Accumulation Behavior in Quantum Dot Light-Emitting Diodes

Cheng Wang1,2, Chi Zhang1, Ruifeng Li3, Qi Chen1,4,*(), Lei Qian3, Liwei Chen1,5   

  1. 1 i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, China
    2 School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China
    3 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang Province, China
    4 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
    5 In-situ Center for Physical Sciences, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
  • Received:2021-04-14 Accepted:2021-05-07 Published:2021-05-10
  • Contact: Qi Chen E-mail:qchen2011@sinano.ac.cn
  • Supported by:
    the Ministry of Science and Technology of China(2016YFA0200700);the National Natural Science Foundation of China(21625304);the National Natural Science Foundation of China(21875280);the National Natural Science Foundation of China(22022205);the National Natural Science Foundation of China(21991150);the National Natural Science Foundation of China(21991153)

摘要:

量子点发光二极管(QLED)是不需要额外光源的主动发光技术,在显示领域中的应用前景被广泛看好。寿命较短是影响QLED商业化的重要因素之一,并且其老化机理尚不清晰。在本工作中,我们通过自主搭建电荷提取装置,证实红光QLED在恒流驱动过程中,存在显著的电荷累积。累积电荷量随着驱动电流密度增加而增加,但当超过阈值电流密度(对应于开启电压)后逐渐趋于饱和。随着器件老化,亮度下降伴随着累积电荷量进一步增加。本工作对QLED老化过程中电荷累积规律的理解,能为QLED材料和界面的优化设计提供直观判据。

关键词: 量子点发光二极管, 寿命, 注入势垒, 电荷累积, 注入平衡

Abstract:

Quantum dot light-emitting diodes (QLEDs) constitute the next-generation display technology because of their wide color gamut, narrow emission spectrum, adjustable emission wavelength, and ease of solution processability. With the development of novel material and device preparation techniques, the QLEDs not only show an external quantum efficiency (EQE) of more than 20% in red, green, and blue (primary color) devices, but also achieve 100% Rec.2020 (recommendation standard for ultrahigh-resolution display) color gamut coverage. However, the future commercialization of QLEDs is still a challenge. The T95 lifetime (defined as 95% time for the luminance to decay to the initial value L0 = 1000 cd·m-2) of red, green, and blue QLED devices is significantly lower than that of commercially available organic light-emitting diodes (OLEDs). This is ascribed to the lacking of understanding and argument to hypothesis of degradation mechanisms. A QLED is a sandwich structure composed of a quantum dot (QD) emitter layer, carrier transport layer, and electrode layer. The QLED works on the principle of electroluminescence: electrons and holes injected from the electrodes on both sides of the device cross multiple interfaces and reach the QD emitter layer to undergo radiation recombination. Generally, the QD emitter layer adopts the structure of a wide-band gap shell wrapped around a narrow band-gap core. Because of the deep valence band maximum, the hole injection barrier is higher, and the hole injection efficiency is reduced. This not only disturbs the injection balance but also leads to the accumulation of interfacial holes, which is one of the important factors affecting the efficiency and life of the device. Past studies have attempted to understand charge accumulation behavior in QLEDs by predicting the interfacial energy band structure, and there are very few reports on the direct measurement of charge accumulation. In this work, we built a charge extraction circuit to investigate the charge accumulation behavior before and after aging in a prototype red QLED. In the fresh red QLEDs, the number of accumulated charges gradually increased with the driving current density and tended to saturate above turn-on current density. In the aged red QLEDs, the accumulated charges increased with a decrease in luminance. Our method to investigate the charge accumulation behavior developed can be extended to various kinds of LEDs, such as OLEDs and perovskite LEDs, thus providing insight into their working mechanism.

Key words: Quantum dot light-emitting diodes, Lifetime, Injection barrier, Charge accumulation, Injection balance

MSC2000: 

  • O649