物理化学学报 >> 1987, Vol. 3 >> Issue (04): 407-411.doi: 10.3866/PKU.WHXB19870414

研究论文 上一篇    下一篇

电沉积CdSe薄膜的表面光伏研究

陈子云; 王子琦; 周绍民   

  1. 厦门大学物理化学研究所
  • 收稿日期:1986-04-28 修回日期:1986-11-25 发布日期:1987-08-15
  • 通讯作者: 王子琦

INVESTIGATION OF ELECTRODEPOSITED CdSe THIN-FILM BY SURFACE PHOTOVOLTAGE SPECTROSCOPY

Chen Zhiyun; Wang Zhiqi; Zhou Shaomin   

  1. Institute of Physical Chemistry; Xiamen University
  • Received:1986-04-28 Revised:1986-11-25 Published:1987-08-15
  • Contact: Wang Zhiqi

摘要: 用电沉积法得到的CdSe薄膜, 在450 ℃热处理后, 其光电转换效率达到5.9%。 表面光伏谱测定结果表明, 电沉积CdSe薄膜经热处理后, 其光伏效应显著提高。推算出其少子扩散长度Lp等于0.42 μm。

Abstract: CdSe semiconductor thin-film electrodes have been prepared by means of electrodeposition. They are capable of achieving 5.9% solar energy conversion efficiency in PEC performance after being annealed at 450 ℃ in air. Surface photovoltage (SPV) has been used to study their photoelectrochemical properties. SPV spectra of the CdSe thin-films with and without annealing show that surface recombination of minority carriers is significantly reduced after annealing.
The minority carriers diffusion length L_P has been determined by extrapolating the plots ofreciprocal surface photovoltage as a function of the absorption length to zero ΔV~(-1)_(ph). It is found that L_p=0.42 μm.