物理化学学报 >> 1992, Vol. 8 >> Issue (03): 326-331.doi: 10.3866/PKU.WHXB19920309

研究论文 上一篇    下一篇

钛阳极氧化膜的光诱导钴离子注入

陈坤尧; 林仲华   

  1. 厦门大学化学系、物理化学研究所,厦门 361005
  • 收稿日期:1991-01-10 修回日期:1991-06-19 发布日期:1992-06-15
  • 通讯作者: 林仲华

The Implantation of Light-Induced CoIONS into Ti Anodic Oxide Film

Chen Kun-Yao; Lin Zhong-Hua   

  1. Department of Chemistry, Xiamen University, Xiamen 361005
  • Received:1991-01-10 Revised:1991-06-19 Published:1992-06-15
  • Contact: Lin Zhong-Hua

摘要: 发现光诱导下钴离子可以注入钛阳极氧化膜, 利用光电流谱技术和X-射线光电子能谱技术研究这一过程。结果表明: 在浓度≥0.10 mol·cm~(-3)的Co·(NO_3)_2溶液中, 光照使界面上的钴离子部份受激而具有较高的能量, 这些钴离子能够克服膜/溶液界面势垒和TiO_2晶格激活能进入氧化膜的四面体或八面体空位, 并可能与氧配位形成呈蓝色的钴四配位化合物或粉红色的钴六配位化合物。

关键词: 钴离子注入, 光诱导, 钛阳极氧化膜

Abstract: Implantation of light-induced Co ions from Co(NO_3)_2 solution (≥0. 10 mol·cm~(-3)) into Ti anodic oxide film was observed and studied by photocurrent spectroscopy and XPS technique. The results show that implantation could not take place at film/solution interface without illumination. But the Co ions at film/solution interface excited by illuminating can overcome the interface barrier and the TiO_2 lattice energy and go into the tetrahedral interstitial sites and/or octahedral interstitial sites in TiO_2 lattice. The implanted Co ions can interact with the O~(2-) ions in the lattice and probably form tetracoordinated compound of Co with typical blue color and hexacoordinated compound of Co with typical pink color. The quantum efficiency for photoelectric conversion of Ti anodic film decreases with very high doping concentration of Co ions.

Key words: Implantation of Co ions, Light-induced, Ti anodic oxide film