物理化学学报 >> 1996, Vol. 12 >> Issue (03): 224-228.doi: 10.3866/PKU.WHXB19960307

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锑化镓的光助微刻蚀及其表面氧化物的研究

曹阳,陆寿蕴,李爱珍   

  1. 复旦大学化学系，上海 200433；中国科学院上海冶金所，上海 200050
  • 收稿日期:1995-06-21 修回日期:1995-10-12 发布日期:1996-03-15
  • 通讯作者: 陆寿蕴

Photoassisted Microetching of GaSb with Focused Laser Light and the Investigation of its Surface Oxides

Cao Yang,Lu Shou-Yun,Li Ai-Zhen   

  1. Chemistry Department of Fudan University,Shanghai 200433;Shanghai Institute of Metallurgy,Shanghai 200050
  • Received:1995-06-21 Revised:1995-10-12 Published:1996-03-15
  • Contact: Lu Shou-Yun

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摘要：

用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解．锑化镓电极在一定电势下生成的氧化腹，用俄歇能谱证明，其主要成分为难溶的氧化锑，此氧化膜的存在抑制了锑化镓的进一步腐蚀，同时亦使锑化镓的半导体光电化学性能大为减弱．通过激光微刻蚀及电子显微镜的观察，在刻蚀剂中添加酒石酸、柠檬酸和氢氟酸等试剂，可使刻蚀图形得到改善．实验研究了锑化镓的平带电势的测定．

关键词: 半导体电化学, 半导体光电化学, 锑化镓的光助微刻蚀, 锑化镓电极的界面性质

Abstract:

GaSb is an important compound semiconductor. This paper reports the etching of GaSb, and the formation and dissolution of the oxidized layer of GaSb using electrochemical and photoelectrochemical methods. The major composition of the GaSb oxidized layer was found to be antimony oxides which are difficult to dissolve in aqueous solution. This layer could prevent the surface from being further etched, and could make the semiconductor losing its photoelectrochemical properties. Addition of tartaric acid, citric acid and hydrofluoric acid into the solution improved the etching. The method of measuring the flatband potential of the interface between GaSb and electrolyte has also been investigated.

Key words: Semiconductor electrochemistry, Photoelectrochemistry of semiconduceor, Photomicroetching of GaSb, Interface properties of GaSb electrode