物理化学学报 >> 1997, Vol. 13 >> Issue (02): 153-157.doi: 10.3866/PKU.WHXB19970210

研究简报 上一篇    下一篇

镓在裸Si系和SiO2/Si系掺杂效应

刘秀喜,薛成山,孙瑛,赵富贤,王显明,李玉国   

  1. 山东师范大学半导体所，济南 250014
  • 收稿日期:1996-05-01 修回日期:1996-09-12 发布日期:1997-02-15
  • 通讯作者: 刘秀喜

Gallium Doping Effect in Bare Silicon System and SiO2/Si System

Liu Xiu-Xi,Xue Cheng-Shan,Sun Ying,Zhao Fu-Xian,Wang Xian-Ming,Li Yu-Guo   

  1. Semiconductor Research Institute,Shandong Normal University,Jinan 250014
  • Received:1996-05-01 Revised:1996-09-12 Published:1997-02-15
  • Contact: Liu Xiu-Xi

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关键词: 开管扩镓, 裸Si系, SiO2/Si系, 掺杂效应

Abstract:

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .

Key words: Open-tube diffusion, Bare silicon system, SiO2/Si system, Doping effect