物理化学学报 >> 1997, Vol. 13 >> Issue (02): 153-157.doi: 10.3866/PKU.WHXB19970210
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刘秀喜,薛成山,孙瑛,赵富贤,王显明,李玉国
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Liu Xiu-Xi,Xue Cheng-Shan,Sun Ying,Zhao Fu-Xian,Wang Xian-Ming,Li Yu-Guo
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关键词: 开管扩镓, 裸Si系, SiO2/Si系, 掺杂效应
Abstract:
Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .
Key words: Open-tube diffusion, Bare silicon system, SiO2/Si system, Doping effect
刘秀喜,薛成山,孙瑛,赵富贤,王显明,李玉国. 镓在裸Si系和SiO2/Si系掺杂效应[J]. 物理化学学报, 1997, 13(02): 153-157.
Liu Xiu-Xi,Xue Cheng-Shan,Sun Ying,Zhao Fu-Xian,Wang Xian-Ming,Li Yu-Guo. Gallium Doping Effect in Bare Silicon System and SiO2/Si System[J]. Acta Phys. -Chim. Sin., 1997, 13(02): 153-157.
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链接本文: http://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB19970210
http://www.whxb.pku.edu.cn/CN/Y1997/V13/I02/153
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