物理化学学报 >> 1997, Vol. 13 >> Issue (02): 164-168.doi: 10.3866/PKU.WHXB19970212

研究简报 上一篇    下一篇

NiPd/Si界面常温扩散及硅化物形成的XPS证据

张国庆,刘冰,姚素薇,郭鹤桐,何菲,龚正烈   

  1. 天津大学应用化学系,天津 300072|天津大学一碳化工国家重点实验室,天津 300072|天津理工大学物理系,天津 300191
  • 收稿日期:1996-06-25 修回日期:1996-10-10 发布日期:1997-02-15
  • 通讯作者: 张国庆

XPS Evidence for the Diffusion and Formation of Metal Silicide at Atmospheric Temperature on the Interface of NiPd/Si

Zhang Guo-Qing,Liu Bing,Yao Su-Wei,Guo He-Tong,He Fei,Gong Zheng-Lie   

  1. Department of Applied Chemistry,Tianjin University,Tianjin 300072|State Key Laboratory for 1C Chemical Engineering,Tianjin University,Tianjin 300072|Department of Physics,Tianjin Institute for Technology,Tianjin 300191
  • Received:1996-06-25 Revised:1996-10-10 Published:1997-02-15
  • Contact: Zhang Guo-Qing

关键词: XPS, NiPd/Si界面, 扩散, 金属硅化物

Abstract:

 Nickel-palladium film on p-Si prepared by potential -controlled electrodeposition has much better adherence than that deposited by other methods .To reveal the reasons of this effect, X-ray photoelectron spectroscopy (XPS) combined with Ar+ sputtering was used to investigate the interface of NiPd /Si. The results showed that dramatic interdiffusion of Ni, Pd and Si had occurred at atmospheric temperature. On the XPS spectra of nickel and palladium , there are two kinds of binding energy , contributed by pure metals and metal silicide respectively. NiSi, PdSi and Pd2Si were formed at the interface. Both of the electric field on the surface and the H atoms in the metal lattice have the possibility to promote reactions between nickel or palladium and silicon .

Key words: XPS, NiPd/Si interface, Diffusion, Metal silicide