物理化学学报 >> 1999, Vol. 15 >> Issue (04): 356-360.doi: 10.3866/PKU.WHXB19990413

研究简报 上一篇    下一篇

半导体硅上电沉积Cu/Co层状薄膜

刘冰, 龚正烈, 姚素薇, 郭鹤桐, 袁华堂, 张允什   

  1. 南开大学新能源材料化学研究所,天津 300071|天津理工学院光电系,天津 300191|天津大学化工学院,天津 300072
  • 收稿日期:1998-06-04 修回日期:1998-09-01 发布日期:1999-04-15
  • 通讯作者: 刘冰

Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon

Liu Bing, Gong Zheng-Lie, Yao Su-Wei, Guo He-Tong, Yuan Hua-Tang, Zhang Yun-shi   

  1. Institute of New Energy Material Chemistry,Nankai University,Tianjin 300071|Deparmemt of Physics,Tianjin Institute of Technology,300191|Department od Applied Chemistry,Tianjin University,Tianjin 300072
  • Received:1998-06-04 Revised:1998-09-01 Published:1999-04-15
  • Contact: Liu Bing

关键词: p-Si, 电沉积, Cu/Co层状膜

Abstract:

The Cu/Co layer film on the semiconductor silicon was obtained by electrodeposition for the first time. The results of current - time transient curves and STM image showed that the wt of Cu film is two-dimensional while an island three-dimension growth for the Co film was formed. The addition of CrO3 changed the current - time transient curves, and affected the growth of crystal. The addition of CrO3 decreased the nucleation rate of Cu, while it changed the shape of current-time transient curves of the deposition of Co at higher deposition potentials. For the deposition of Co, addition of CrO3 can form the adhesive film [Co. xCr2O3' YH2O]ad or [CoOH. nCr(OH)3]ad, which decreased the nucleation rate of Co.

Key words: p-Si, Electrodeposition, Cu/Co layer film