物理化学学报 >> 2002, Vol. 18 >> Issue (07): 633 -635 .doi: 10.3866/PKU.WHXB20020713

研究论文 上一篇    下一篇

K-Pb-Tl-O复合氧化物的合成和电子结构的XPS研究

邱丽美;刘芬;赵良仲   

  1. 中国科学院化学研究所,北京 100080
  • 收稿日期:2001-11-19 修回日期:2002-03-20 发布日期:2002-07-15
  • 通讯作者: 刘芬 E-mail:xps@infoc3.icas.ac.cn

Synthesis of K-Pb-Tl-O Complex Oxides and XPS Study on Their Electronic Structure

Qiu Li-Mei;Liu Fen;Zhao Liang-Zhong   

  1. Institute of Chemistry,Chinese Academy of Sciences,Beijing 100080
  • Received:2001-11-19 Revised:2002-03-20 Published:2002-07-15
  • Contact: Liu Fen E-mail:xps@infoc3.icas.ac.cn

摘要: 用熔盐阳极电沉积法合成了导电的复合氧化物K-Pb-Tl-O晶体.这些晶体具有纳米尺寸层状结构.用XPS对其进行了表征,并与相关的化合物进行了比较.实验表明,氧化物中的Pb和Tl都以高价态的单一价态存在,但电子结合能比相应的非导电低价化合物的低.该文用原子外弛豫效应解释了复合氧化物中的Pb和Tl的结合能的反常现象.讨论了它们的价电子结构与导电性的关系.

关键词: K-Pb-Tl-O, X射线光电子能谱(XPS), 电子结构

Abstract: Crystals of K-Pb-Tl-O complex oxides were electrodeposited on the anode from molten salts.The resulting crystals show multilayer structure with resolvable layer thicknesses in nonameters.XPS was used to analyze the crystals and the related compounds.The experimental results indicate that Pb and Tl in K-Pb-Tl-O oxides are in single high valence states.However,their core level binding energies are lower than that of the corresponding low valence non-conducting compounds.This abnormal phenomenon has been explained by using the extra-atomic relaxation effect.In addition,the relationship between the valence electronic structure and the conductivity has been discussed.

Key words: K-Pb-Tl-O, XPS, Electronic structure