物理化学学报 >> 2004, Vol. 20 >> Issue (04): 409-413.doi: 10.3866/PKU.WHXB20040416

研究论文 上一篇    下一篇

碳纳米管阵列的气相沉积制备及场发射特性

张琦锋;于洁;宋教花;张耿民;张兆祥;薛增泉;吴锦雷   

  1. 北京大学电子学系，北京　100871
  • 收稿日期:2003-08-20 修回日期:2003-12-19 发布日期:2004-04-15
  • 通讯作者: 吴锦雷 E-mail:jlwu@pku.edu.cn

Fabrication of Aligned Carbon Nanotubes by a Vapor-phase Deposition Technique and Their Field Emission Properties

Zhang Qi-Feng;Yu Jie;Song Jiao-Hua;Zhang Geng-Min;Zhang Zhao-Xiang;Xue Zeng-Quan;Wu Jin-Lei   

  1. Department of Electronics, Peking University, Beijing　100871
  • Received:2003-08-20 Revised:2003-12-19 Published:2004-04-15
  • Contact: Wu Jin-Lei E-mail:jlwu@pku.edu.cn

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摘要： 运用酞菁铁热解法气相沉积制备了碳纳米管阵列.所得碳纳米管呈多壁结构.单根碳纳米管的平均直径约为25 nm，长度约4～5 μm，且具有很好的准直性.研究了碳纳米管阵列的平面场发射特性，相应的开启电压和阈值电压分别为1.28和2.3 V•μm－1，表明碳纳米管具有很强的场发射能力.利用场发射显微镜观察了碳纳米管阵列的场发射像，发现碳纳米管阵列的场发射主要集中在样品薄膜的边缘部位.这是由于碳纳米管密度过大而产生的屏蔽效应所致.

关键词: 碳纳米管, 气相沉积, 场发射, 屏蔽效应

Abstract: Well-aligned carbon nanotubes with multiwall structure were fabricated by using a vapor-phase deposition technique based on the pyrolysis of iron phthalocyanine. The average diameter of single nanotube is about 25 nm, and the length of each is from 4 to 5 μm. The result of measure on the planar field emission of the aligned carbon nanotubes shows a very powerful ability of as-synthesized carbon nanotubes in the field emission with a turn-on voltage of 1.28 V•μm－1 and a threshold voltage of 2.3 V•μm－1. The field emission image of the aligned carbon nanotubes was also observed through using a field emission microscope, and it was found that the field emission of the carbon nanotubes was mainly centered on the edge of the thin film sample, which was attributed to the screening effect caused by the overlarge density of the carbon nanotubes.

Key words: Carbon nanotube, Vapor-phase deposition, Field emission, Screening effect