物理化学学报 >> 2011, Vol. 27 >> Issue (06): 1305-1311.doi: 10.3866/PKU.WHXB20110635

热力学,动力学和结构化学 上一篇    下一篇

I型和II型结构气体水合物的记忆效应

刘瑜, 赵佳飞, 郭长松, 宋永臣, 刘卫国, 程传晓, 叶陈诚, 薛铠华   

  1. 大连理工大学教育部海洋能源利用与节能重点实验室, 辽宁 大连 116023
  • 收稿日期:2011-03-03 修回日期:2011-03-28 发布日期:2011-05-31
  • 通讯作者: 宋永臣 E-mail:powere@dlut.edu.cn
  • 基金资助:

    国家自然科学基金重点项目(50736001), 国家自然科学基金(51006017), 国家高技术研究发展计划项目(863) (2006AA09209-5)及国家重点基础研究发展计划项目(973) (2009CB219507)资助

Memory Effects of Structure I and II Gas Hydrates

LIU Yu, ZHAO Jia-Fei, GUO Chang-Song, SONG Yong-Chen, LIU Wei-Guo, CHENG Chuan-Xiao, YE Chen-Cheng, XUE Kai-Hua   

  1. Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, Dalian University of Technology, Dalian 116023, Liaoning Province, P. R. China
  • Received:2011-03-03 Revised:2011-03-28 Published:2011-05-31
  • Contact: SONG Yong-Cheng E-mail:powere@dlut.edu.cn
  • Supported by:

    The project was supported by the Key Program of National Natural Science Foundation of China (50736001), National Natural Science Foundation of China (51006017), National High Technology Research and Development Program of China (863) (2006AA09209-5), National Key Basic Research Program of China (973) (2009CB219507).

摘要:

利用水合物二次生成实验装置, 采用“定容法”对I型(甲烷、二氧化碳)和II型(丙烷)结构气体水合物的二次生成进行了实验, 研究了不同结构水合物(I型、II型)彼此间的记忆效应, 发现水合物生成过程存在明显的诱导期, I型结构水合物间在二次生成过程中存在着记忆效应. I型与II型结构水合物之间在相互二次生成过程中存在着显著的记忆效应.

关键词: 诱导时间, 二次生成, 记忆效应, 多孔介质, 气体水合物

Abstract:

We studied the reformation processes for structure I (sI) (methane, carbon dioxide) and structure II (sII) (propane) gas hydrates experimentally and investigated the memory effects between sI and sII hydrates using a constant-volume system. During these experiments, the induction period for hydrate formation was observed. Moreover, we also found that there were obvious memory effects in secondary formation of sI gas hydrates as well as in alternate secondary formation of sI and sII gas hydrates.

Key words: Induction time, Reformation, Memory effect, Porous media, Gas hydrate

MSC2000: 

  • O642