物理化学学报 >> 2013, Vol. 29 >> Issue (01): 89-94.doi: 10.3866/PKU.WHXB201211092

电化学和新能源 上一篇    下一篇

化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究

朱俊1, 张耀红1,2, 胡林华1, 戴松元1   

  1. 1 中国科学院新型薄膜太阳电池重点实验室, 中国科学院等离子体物理研究所, 合肥 230031;
    2 中国科学院福建物质结构研究所, 中国科学院光电材料化学与物理重点实验室, 福州 350002
  • 收稿日期:2012-10-09 修回日期:2012-11-07 发布日期:2012-12-14
  • 通讯作者: 戴松元 E-mail:sydai@ipp.ac.cn
  • 基金资助:

    国家重点基础研究发展规划(973)(2011CBA00700); 国家高技术研究发展计划(863)(2011AA050527)及国家自然科学基金(21003130, 21103197, 21173227, 21173228)资助项目

Preparation of In2S3 Sensitized Solar Cells with Chemical Bath Deposition and Their Performance

ZHU Jun1, ZHANG Yao-Hong1,2, HU Lin-Lua1, DAI Song-Yuan1   

  1. 1 Key Lab of Novel Thin Film Solar Cells, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China;
    2 Key Lab of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, P. R. China
  • Received:2012-10-09 Revised:2012-11-07 Published:2012-12-14
  • Supported by:

    The project was supported by the National Key Basic Research Program of China (973) (2011CBA00700), National High Technology Research and Development Program of China (863) (2011AA050527), and National Natural Science Foundation of China (21003130, 21103197, 21173227, 21173228).

摘要:

硫化铟是一种稳定、低毒性的半导体材料. 本文采用低成本的化学浴沉积方法制备了硫化铟敏化太阳电池, X射线衍射(XRD)、光电子能谱(XPS)和扫描电镜(SEM)结果表明形成了硫化铟敏化的二氧化钛薄膜. 化学浴沉积温度对所得硫化铟敏化薄膜的形貌有显著的影响, 进而影响电池性能. 温度太低时, 化学浴沉积反应速率太低, 只发生少量沉积; 温度太高时, 化学浴沉积反应速率较快, 硫化铟来不及沉积到二氧化钛多孔薄膜内部. 当温度在40℃时, 硫化铟沉积均匀性最好, 薄膜的光吸收性能最佳, 电池的短路电流最大, 另外, 填充因子达到最佳, 为65%, 电池总体光电转换效率为0.32%.

关键词: 硫化铟, 敏化, 太阳电池, 化学浴沉积, 复合

Abstract:

In2S3 is a stable semiconductor material with low toxicity. We prepared In2S3 sensitized solar cells using low-cost chemical bath deposition methodology. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were used to reveal the microstructure of the In2S3 sensitized TiO2 nanoporous films. Our results indicated that the deposition temperature has a remarkable effect on the morphology of In2S3 sensitized TiO2 films, which in turn affects the photovoltaic performance of devices. When the deposition temperature was low, the deposition reaction rate was slow, resulting in only minimal deposition. However, if the deposition temperature was increased too much, there was insufficient time for the In2S3 to be deposited within the internal pore structure of the TiO2 mesoporous films. The best homogeneous In2S3 sensitized TiO2 films were obtained with a deposition temperature of 40℃. At this temperature, the optical absorption of the resulting film was optimal and displayed the largest short circuit current density among the films examined. Moreover, the fill factor was also the best, approaching 65%. The best overall power conversion efficiency was 0.32%.

Key words: Indium sulfide, Sensitization, Solar cell, Chemical bath depostion, Recombination

MSC2000: 

  • O646